Preferred grain orientations in silicon ribbons grown by the string ribbon and the edge-defined film-fed growth methods

Stockmeier, L.; Müller, G.; Seidl, A.; Lehmann, Toni; Reimann, C.; Friеdrich, J.

doi:10.1016/j.jcrysgro.2014.03.005

Cited by 5 publications

(3 citation statements)

References 21 publications

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“…However, the repetition of twinning has important consequences for the final grain structure and distribution of crystallographic orientations [31]. Indeed, the importance of twinning in the development of the grain structure has been highlighted for different solidification processes ranging from directional solidification [82] to ribbon growth [33,83,84]. In the past few years, we studied rather extensively twin formation, growth, and its At the level of the edge facets, the measured maximum undercooling is again always lower than 1 K. However, higher values (ranging from 2 × 10 −1 to 8 × 10 −1 K) compared to the undercooling inside grain boundary grooves are measured at the edges.…”

Section: Twinning During Solidificationmentioning

confidence: 99%

“…However, the repetition of twinning has important consequences for the final grain structure and distribution of crystallographic orientations [31]. Indeed, the importance of twinning in the development of the grain structure has been highlighted for different solidification processes ranging from directional solidification [82] to ribbon growth [33,83,84]. In the past few years, we studied rather extensively twin formation, growth, and its consequences on the final grain structure and defect formation in general [44][45][46]48,50,52,85].…”

Section: Twinning During Solidificationmentioning

confidence: 99%

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X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation

et al. 2020

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To control the final grain structure and the density of structural crystalline defects in silicon (Si) ingots is still a main issue for Si used in photovoltaic solar cells. It concerns both innovative and conventional fabrication processes. Due to the dynamic essence of the phenomena and to the coupling of mechanisms at different scales, the post-mortem study of the solidified ingots gives limited results. In the past years, we developed an original system named GaTSBI for Growth at high Temperature observed by Synchrotron Beam Imaging, to investigate in situ the mechanisms involved during solidification. X-ray radiography and X-ray Bragg diffraction imaging (topography) are combined and implemented together with the running of a high temperature (up to 2073 K) solidification furnace. The experiments are conducted at the European Synchrotron Radiation Facility (ESRF). Both imaging techniques provide in situ and real time information during growth on the morphology and kinetics of the solid/liquid (S/L) interface, as well as on the deformation of the crystal structure and on the dynamics of structural defects including dislocations. Essential features of twinning, grain nucleation, competition, strain building, and dislocations during Si solidification are characterized and allow a deeper understanding of the fundamental mechanisms of its growth.

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Section: Twinning During Solidificationmentioning

confidence: 99%

“…However, the repetition of twinning has important consequences for the final grain structure and distribution of crystallographic orientations [31]. Indeed, the importance of twinning in the development of the grain structure has been highlighted for different solidification processes ranging from directional solidification [82] to ribbon growth [33,83,84]. In the past few years, we studied rather extensively twin formation, growth, and its consequences on the final grain structure and defect formation in general [44][45][46]48,50,52,85].…”

Section: Twinning During Solidificationmentioning

confidence: 99%

X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation

et al. 2020

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“…The systematic investigations of the interaction of liquid silicon with different graphite materials and coatings brought the conclusion, that in the EFG Si process the formation of SiC particles cannot really be avoided. Also, the occurrence of the inherent special grain structure of EFG and SR silicon could be explained by a growth model which considers the surface energies of the growing grains and the necessary undercooling in front of the phase boundary . This special grain structure is finally also responsible for the strongly non‐uniform distribution of the Fe contamination and the dislocations .…”

Section: Growth Of Photovoltaic Materialsmentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

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This article describes the historic development of the Erlangen Crystal GrowthLaboratory CGL from its beginnings in 1974 at the chair of Materials of Electrical Engineering (Department of Material Science) of the University of Erlangen-Nuremberg until its current status as a large department "Materials" of the Erlangen Fraunhofer-Institute for Integrated Systems and Device Technology. Essential developments and scientific achievements in the various fields of crystal growth and epitaxy are presented from the early period until today.

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Minority lifetime degradation of silicon wafers after electric zone melting

Yang

Lan

2015

Journal of Crystal Growth

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Preferred grain orientations in silicon ribbons grown by the string ribbon and the edge-defined film-fed growth methods

Cited by 5 publications

References 21 publications

X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation

X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Minority lifetime degradation of silicon wafers after electric zone melting

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