Preferentially Grown Ultranano c-Diamond and n-Diamond Grains on Silicon Nanoneedles from Energetic Species with Enhanced Field-Emission Properties

Thomas, Joseph P.; Chen, Huang-Chin; Tseng, Shih Chun; Wu, Hung-Chi; Lee, Chi-Young; Cheng, Hsiu‐Fung; Tai, Nyan‐Hwa; Lin, I‐Nan

doi:10.1021/am3016203

Cited by 19 publications

(14 citation statements)

References 45 publications

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“…These β values are superior to those reported by Thomas et al 26 and much higher than values reported by Tzeng et al 25,33 whose field emission results and analysis appear to have internal contradictions. Two emission regimes can be distinguished.…”

Section: Resultscontrasting

confidence: 80%

Ultrananocrystalline Diamond-Decorated Silicon Nanowire Field Emitters

Palomino

Varshney

Resto³

et al. 2014

ACS Appl. Mater. Interfaces

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Silicon nanowires (SiNWs) were uniformly decorated with ultrananocrystalline diamond (UNCD) by a novel route using paraffin wax as the seeding source, which is more efficient in the creation of diamond nuclei than traditional methods. These one-dimensional ultrananocrystalline diamond-decorated SiNWs (UNCD/SiNWs) exhibit uniform diameters ranging from 100 to 200 nm with a bulbous catalytic tip of ∼250 nm in diameter and an UNCD grain size of ∼5 nm. UNCD/SiNW nanostructures demonstrated enhanced electron field emission (EFE) properties with a turn-on field of about 3.7 V/μm. Current densities around 2 mA/cm(2) were achieved at 25 V/μm, which is significantly enhanced as compared to bare SiNWs.

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Section: Resultscontrasting

confidence: 80%

Ultrananocrystalline Diamond-Decorated Silicon Nanowire Field Emitters

Palomino

Varshney

Resto³

et al. 2014

ACS Appl. Mater. Interfaces

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“…On the other hand, Si nanocones fabricated by Shang et al exhibit a turn-on field of 13 V μm –1 , although the current density is higher (200 μA cm –2 ) compared to the present case . Likewise, Thomas et al reported on FE from Si nanoneedles having a turn-on field of 5.3 V μm –1 and current density of 400 μA cm –2 . Thus, a wide range of figure of merits (e.g., turn-on field and current densities) exist in the literature.…”

Section: Resultsmentioning

confidence: 47%

Surfing Silicon Nanofacets for Cold Cathode Electron Emission Sites

Basu

Kumar

Saini

et al. 2017

ACS Appl. Mater. Interfaces

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Point sources exhibit low threshold electron emission due to local field enhancement at the tip. In the case of silicon, however, the realization of tip emitters has been hampered by unwanted oxidation, limiting the number of emission sites and the overall current. In contrast to this, here, we report the fascinating low threshold (∼0.67 V μm) cold cathode electron emission from silicon nanofacets (Si-NFs). The ensembles of nanofacets fabricated at different time scales, under low energy ion impacts, yield tunable field emission with a Fowler-Nordheim tunneling field in the range of 0.67-4.75 V μm. The local probe surface microscopy-based tunneling current mapping in conjunction with Kelvin probe force microscopy measurements revealed that the valleys and a part of the sidewalls of the nanofacets contribute more to the field emission process. The observed lowest turn-on field is attributed to the absence of native oxide on the sidewalls of the smallest facets as well as their lowest work function. In addition, first-principle density functional theory-based simulation revealed a crystal orientation-dependent work function of Si, which corroborates well with our experimental observations. The present study demonstrates a novel way to address the origin of the cold cathode electron emission sites from Si-NFs fabricated at room temperature. In principle, the present methodology can be extended to probe the cold cathode electron emission sites from any nanostructured material.

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“…On lowering the a‐C layer at interface UNCD/Au‐Si, composite structure delivers better conductivity and improves EFE . Precise growth of sub‐2 nm/above 5 nm sized diamond grains is achieved due to energetic species under low growth temperature and prenucleated interface, thus, tiny grains on silicon nanoneedles deliver enhanced EFE . Gold‐UNCD films show superior EFE properties than copper‐UNCD films and the authentic factor underneath the mechanism is the presence of nanographitic phases .…”

Section: Introductionmentioning

confidence: 99%

Phase transitions and critical phenomena of tiny grains carbon films synthesized in microwave‐based vapor deposition system

Ali

Lin

2018

Surface & Interface Analysis

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Different peak trends of tiny grains carbon film have been observed under the investigations of the Raman spectroscopy and energy loss spectroscopy. Carbon films known in nanocrystalline and ultrananocrystalline diamond films are synthesized by employing microwave-based vapor deposition system. Carbon atoms exhibit several state behaviors depending on the incurred positions of their electrons. Different morphology of tiny grains under different chamber pressure is related to different rate of arriving typical energies at/near substrate surface. Those tiny grains of carbon film, which evolved in graphitic state atoms are converted to structure of smooth elements where elongation of atoms of one-dimensional arrays is as per exerting surface format forces along opposite poles from their centers. Such tiny grains in the film are the cause of v 1 peak under the investigation of the Raman spectrum because of the enhanced propagation of input laser signals through channelized inter-state electron gaps of elongated graphitic state atoms. Those tiny grains of carbon film, which evolved in fullerene state are the cause of v 2 peak. The tiny grains related to v 1 peak possess a low intensity as compared with the ones which comprised atoms having state behaviors known in their exceptional hardness. Tiny grains representing v 1 peakin the Raman spectrum are also the cause of field emission characteristic of a carbon film. Different peak recordings were made for the Raman at defined positions indicating a different state of carbon atoms for a different phase of deposited tiny grains, which is in line to their energy loss spectroscopy.

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Preferentially Grown Ultranano c-Diamond and n-Diamond Grains on Silicon Nanoneedles from Energetic Species with Enhanced Field-Emission Properties

Cited by 19 publications

References 45 publications

Ultrananocrystalline Diamond-Decorated Silicon Nanowire Field Emitters

Ultrananocrystalline Diamond-Decorated Silicon Nanowire Field Emitters

Surfing Silicon Nanofacets for Cold Cathode Electron Emission Sites

Phase transitions and critical phenomena of tiny grains carbon films synthesized in microwave‐based vapor deposition system

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