Preface to Special Topic: Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials

Kalinin, Sergei V.; Ye, Zuo‐Guang; Kholkin, A. L.

doi:10.1063/1.4751458

Cited by 5 publications

(5 citation statements)

References 67 publications

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“…In this work, we investigated the influence of a full magnetic field step cycle on the ferroelectric domains ( Figure 3). Ferroelectric domain nucleation and growth and local piezoelectric hysteresis (strain loops) were visualized using PFM [25][26][27] under in-plane variable magnetic fields (VFM, variable field module). Aurivillius phase thin films are preferentially c-axis oriented with most of the grains having their crystallographic a-axis lying along the lateral plane of the film.…”

Section: Resultsmentioning

confidence: 99%

“…These loops were generated on removal of an applied DC-bias via DART switching spectroscopy PFM (DART-SSPFM. 3,26 No PFM hysteresis loops were performed at AE0 Oe. As is illustrated by the loops in Figure 7A, an increase in piezoresponse was observed on increasing the magnetic field from +1000 Oe to +2500 Oe for the Type A domain, which correlates with the increase in piezoresponse observed for the images in Figure 6C-E. No change in piezoresponse was observed for the loops generated on reversing the magnetic field to 0 Oe and on decreasing further to À1000 Oe and À2500 Oe, consistent with the piezoresponse images displayed in Figure 6E Figure 6E-M), the magnitude of the piezoresponse cycles with the magnetic field strength and direction: a decrease in piezoresponse is demonstrated for the PFM loops when the magnetic field is reversed to a negative field of À1000 Oe, which increases in magnitude when the strength of the negative magnetic field is increased to À2500 Oe.…”

Section: Resultsmentioning

confidence: 99%

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Direct visualization of magnetic‐field‐induced magnetoelectric switching in multiferroic aurivillius phase thin films

et al. 2016

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Multiferroic materials displaying coupled ferroelectric and ferromagnetic order parameters could provide a means for data storage whereby bits could be written electrically and read magnetically, or vice versa. Thin films of Aurivillius phase Bi6Ti2.8Fe1.52Mn0.68O18, previously prepared by a chemical solution deposition (CSD) technique, are multiferroics demonstrating magnetoelectric coupling at room temperature. Here we demonstrate the growth of a similar composition, Bi6Ti2.99Fe1.46Mn0.55O18, via the liquid injection chemical vapor deposition technique. High resolution magnetic measurements reveal a considerably higher in-plane ferromagnetic signature than CSD grown films (MS = 24.25 emu/g (215 emu/cm 3 ), MR = 9.916 emu/g (81.5 emu/cm 3 ), HC = 170 Oe). A statistical analysis of the results from a thorough microstructural examination of the samples, allows us to conclude that the ferromagnetic signature can be attributed to the Aurivillius phase, with a confidence level of 99.95 %. In addition, we report the direct piezoresponse force i E-mail: lynette.keeney@tyndall.ieJournal of the American Ceramic Society DOI: 10.1111DOI: 10. /jace.14597 (2016 2 microscopy (PFM) visualization of ferroelectric switching while going through a full in-plane magnetic field cycle, where increased volumes (8.6 to 14 % compared with 4 to 7 % for the CSDgrown films) of the film engage in magnetoelectric coupling and demonstrate both irreversible and reversible magnetoelectric domain switching. IntroductionMultiferroic materials which exhibit more than one mutually-coupled ferroic (e.g. ferroelectric (FE) / ferromagnetic (FM) / ferroelastic) order parameter (OP) in a single phase, provide additional degrees of OP freedom that can be exploited in novel multistate memory and sensing devices.Magnetoelectricity (the generation of a change in magnetization by an applied electric field or vice versa), on the other hand, is a related phenomenon that will arise in any material that is both electrically and magnetically polarizable and possesses an appropriate magnetic symmetry, regardless of whether it is multiferroic or not. For example, the magnetoelectric Cr2O3 is an antiferromagnetic dielectric and is neither FE nor FM 1 . The unique advantage of single phase magnetoelectric multiferroics is that not only could they find application in high storage density, lowpower memory devices that can be electrically written and magnetically read, but also memory technologies with 4-state logic might be achieved by constructing devices that exploit the presence of both ferroelectric and ferromagnetic states 2 -representing a clear improvement over current 2-state logic devices. However, there are relatively few 3-8 materials demonstrating ferroelectric and ferromagnetic properties in a single-phase at room temperature. Due to conflicting electronic structure requirements for ferroelectricity (empty d orbitals) and ferromagnetism (partially filled d orbitals), the two properties tend to be mutually exclusive 9 . Examples of multiferroic material...

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Direct visualization of magnetic‐field‐induced magnetoelectric switching in multiferroic aurivillius phase thin films

et al. 2016

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“…Piezoresponse force microscopy (PFM) 68,73,82,83,84 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 F o r P e e r R e v i e w 26 frequency vertical PFM images, which given the low piezoresponses, topography cross-talk is likely also to be contributing to the images obtained. Since the films are comprised of some a-axis oriented grains as well as c-axis oriented grains ( Fig.…”

Section: (2) Ferroelectric Characterizationmentioning

confidence: 99%

Magnetic Field‐Induced Ferroelectric Switching in Multiferroic Aurivillius Phase Thin Films at Room Temperature

et al. 2013

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Single-phase multiferroic materials are of considerable interest for future memory and sensing applications. Thin films of Aurivillius phase Bi7Ti3Fe3O21 and Bi6Ti2.8Fe1.52Mn0.68O18 (possessing six and five perovskite units per half-cell, respectively) have been prepared by chemical solution deposition on c-plane sapphire. Superconducting quantum interference device magnetometry reveal Bi7Ti3Fe3O21 to be antiferromagnetic (TN = 190 K) and weakly ferromagnetic below 35 K, however, Bi6Ti2.8Fe1.52Mn0.68O18 gives a distinct room-temperature in-plane ferromagnetic signature (Ms = 0.74 emu/g, μ0Hc =7 mT). Microstructural analysis, coupled with the use of a statistical analysis of the data, allows us to conclude that ferromagnetism does not originate from second phase inclusions, with a confidence level of 99.5%. Piezoresponse force microscopy (PFM) demonstrates room-temperature ferroelectricity in both films, whereas PFM observations on Bi6Ti2.8Fe1.52Mn0.68O18 show Aurivillius grains undergo ferroelectric domain polarization switching induced by an applied magnetic field. Here, we show for the first time that Bi6Ti2.8Fe1.52Mn0.68O18 thin films are both ferroelectric and ferromagnetic and, demonstrate magnetic field-induced switching of ferroelectric polarization in individual Aurivillius phase grains at room temperature

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“…However, the noise level in any XRD scan places a limit on the detectability on such minor phases and the method is intrinsically unable to detect trace levels (typically 1-3 vol %) of strongly magnetic secondary phases which may affect the overall magnetization of the sample. was important in explaining why a sol which was set-up to deliver an m=6 structure could produce an m=5 structure without large amounts of second phase appearing in the film.Note that in order to make up for the deficiency in Ti 4+ at the B-site of 117,118,119,120,121 . As these films are preferentially c-axis mode was employed (Fig.…”

mentioning

confidence: 99%

“…Note that in order to make up for the deficiency in Ti 4+ at the B-site of 117,118,119,120,121 . As these films are preferentially c-axis mode was employed (Fig.…”

mentioning

confidence: 99%

Novel Approaches for Genuine Single‐Phase Room Temperature Magnetoelectric Multiferroics

Keeney¹,

Schmidt²,

Amann³

et al. 2016

Nanoscale Ferroelectrics and Multiferroics

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Preface to Special Topic: Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials

Cited by 5 publications

References 67 publications

Direct visualization of magnetic‐field‐induced magnetoelectric switching in multiferroic aurivillius phase thin films

Direct visualization of magnetic‐field‐induced magnetoelectric switching in multiferroic aurivillius phase thin films

Magnetic Field‐Induced Ferroelectric Switching in Multiferroic Aurivillius Phase Thin Films at Room Temperature

Novel Approaches for Genuine Single‐Phase Room Temperature Magnetoelectric Multiferroics

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