2013
DOI: 10.1115/1.4024818
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Predictive Modeling for Glass-Side Laser Scribing of Thin Film Photovoltaic Cells

Abstract: Laser scribing of multilayer thin films is an important process for producing integrated serial interconnection of minimodules, used to reduce photocurrent and resistance losses in a large-area solar cell. Quality of such scribing contributes to the overall quality and efficiency of the solar cell and therefore predictive capabilities of the process are essential. Limited numerical work has been performed in predicting the thin film laser removal processes. In this study, a sequentially-coupled multilayer ther… Show more

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Cited by 18 publications
(17 citation statements)
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References 16 publications
(21 reference statements)
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“…It can be seen that no other elements except Si and Sn in region B, which indicates that CdS and CdTe are completed removed in this region and no inter-diffusion of S into the TCO layer. The co-existing of Si and Sn is due to the larger electron penetration depths of SnO 2 :F compared to its thickness [13]. In region A (~10μm) -macro-crack broken area, elements of Cd and S are detected besides Sn and Si.…”
Section: Film Removal Under High Fluencesmentioning
confidence: 93%
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“…It can be seen that no other elements except Si and Sn in region B, which indicates that CdS and CdTe are completed removed in this region and no inter-diffusion of S into the TCO layer. The co-existing of Si and Sn is due to the larger electron penetration depths of SnO 2 :F compared to its thickness [13]. In region A (~10μm) -macro-crack broken area, elements of Cd and S are detected besides Sn and Si.…”
Section: Film Removal Under High Fluencesmentioning
confidence: 93%
“…Therefore, understanding the film removal mechanisms and characterizing the potential defects during laser scribing processes are important for the cost reduction of thin film solar cells. In the previous work [13], P1 scribing of TCO layer has been studied. P2 and P3 are similar processes, since both are under micro-explosion mechanism with the plasma occurs at the interface between absorber and TCO layers.…”
Section: Introductionmentioning
confidence: 99%
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