Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment

Ravotti, F.; Gläser, M.; Saigné, Frédéric; Dusseau, L.; Sarrabayrouse, G.

doi:10.1063/1.2337084

Cited by 5 publications

(3 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The recorded signal from RadFETs is the shift of the transistor threshold voltage that is converted to dose (Gy) following a power-low calibration curve , where and are experimental parameters. As showed in many works [8], [9] and in references therein, annealing phenomena [2] that affect the RadFETs selected in [11] are of the order of a few percent over years time-scale. For this reason the data presented in this work were not corrected for such a effect.…”

Section: B Devices Testedmentioning

confidence: 99%

“…It is thus clear that the sensors for the LHC have to cover different sensitivities and a broad dynamic range in terms of TID and particle fluence as well as to comply with specific stability [8], [9] and response [10] requirements. For all these reasons, after intensive test campaigns, a series of four devices (two RadFETs and two p-i-n diodes) has been proved to fulfill LHC Experiments needs [11].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Radiation Monitoring in Mixed Environments at CERN: From the IRRAD6 Facility to the LHC Experiments

Ravotti

Gläser

Rosenfeld

et al. 2007

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

Abstract-RadFET and p-i-n diode semiconductor dosimeters from different manufacturers will be used for radiation monitoring at the Experiments of the CERN LHC accelerator. In this work these sensors were exposed over three months in the CERN-IRRAD6 facility that provides mixed high-energy particles at low rates. The aim was to validate the operation of such sensors in a radiation field where the conditions are close to the ones expected inside full working LHC particle detectors. The results of this long-term irradiation campaign are presented, discussed and compared with measurements by other dosimetric means as well as Monte Carlo simulations. Finally, the integration of several dosimetric devices in one sensor carrier is also presented.

show abstract

Section: B Devices Testedmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Radiation Monitoring in Mixed Environments at CERN: From the IRRAD6 Facility to the LHC Experiments

Ravotti

Gläser

Rosenfeld

et al. 2007

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…measured currents and voltages are converted to fluence by multiplying them with appropriate conversion constants. Measurements of long term annealing effects have been performed [12], [24], [25]. It was found that the annealing effects are significant for this application only for epi and BPW34 diodes.…”

Section: B Measurements With Diodesmentioning

confidence: 99%

Online radiation dose measurement system for ATLAS experiment

Mandić

Cindro

Dolenc

et al. 2009

2009 1st International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications

View full text Add to dashboard Cite

In experiments at Large Hadron Collider detectors and electronics will be exposed to high fluxes of photons, charged particles and neutrons. Damage caused by the radiation will influence performance of detectors. It will therefore be important to continuously monitor the radiation dose in order to follow the level of degradation of detectors and electronics and to correctly predict future radiation damage. A system for online radiation monitoring using semiconductor radiation sensors at large number of locations has been installed in the ATLAS experiment. Ionizing dose in SiO 2 will be measured with RadFETs, displacement damage in silicon in units of 1-MeV(Si) equivalent neutron fluence with p-i-n diodes. At 14 monitoring locationswhere highest radiation levels are expected the fluence of thermal neutrons will be measured from current gain degradation in dedicated bipolar transistors. The design of the system and tests of its performance in mixed radiation field is described in this paper.

show abstract

The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs

Ristić

Vasovic

Jakšić³

2012

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The density of fixed traps (FTs), ΔN ft (cm−2), during isothermal annealing of irradiated radiation-sensitive field-effect transistors (RADFETs) from room temperature to 200 °C has been modelled. The modelling has shown that a simple, two-defect model (2DM), containing two defect types: one defect type for positively charged FTs (PCFTs), and another for negatively charged FTs (NCFTs), is applicable for the temperatures up to 100 °C. However, the three-defect model (3DM), which includes additional PCFT type, should be used for temperatures from 100 to 200 °C. The models describing the behaviour of NCFTs during isothermal annealing have also been analysed. The activation energies of , and , for two PCFT types and one NCFT type, respectively, have been found. In addition, isochronal unannealed curves have been well fitted using logistic function. The modelling of isochronal annealing has also shown that one PCFT type up to 100 °C, and two PCFT types for 100–200 °C, respectively, are active, and additional defect(s) should be included for the temperatures higher than 200 °C. The isochronal annealing, which is significantly less time consuming than isothermal annealing, could be very good tool for the revealing of defects created by various stress types.

show abstract

Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment

Cited by 5 publications

References 15 publications

Radiation Monitoring in Mixed Environments at CERN: From the IRRAD6 Facility to the LHC Experiments

Radiation Monitoring in Mixed Environments at CERN: From the IRRAD6 Facility to the LHC Experiments

Online radiation dose measurement system for ATLAS experiment

The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs

Contact Info

Product

Resources

About