Prediction of the melt/crystal interface geometry in liquid encapsulated Czochralski growth of InP bulk crystals

Three-dimensional modeling of melt flow and interface shape in the industrial liquid-encapsulated Czochralski growth of GaAs

“…This holds especially for the growth of GaAs crystals with large diameter. Most recently, some publications [5,6] reported about three-dimensional (3D) simulation (based on the LES method) of melt flow and prediction of the interface shape for VCz growth of GaAs and LEC growth of InP. In both cases a crucible rotation of 5 rpm was considered in the 3D model and a maximum temperature difference of approximately 20 K was obtained in the melt.…”

Applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic field

“…The LES model presented in [9] was also used in [10][11][12][13]. In [14], a Spalart-Allmaras model extended for LES is used. The mentioned models were partly verified by comparisons with experimental data, see [6,[8][9][10][11][12][13][14][15], such as temperature measurements in the melt and at the melt-crucible interface and crystallization front deflection.…”

3D unsteady analysis of gas turbulent convection during HPLEC InP growth

“…A 3D unsteady numerical analysis of turbulent InP melt convection and its influence on the crystallization front formation was performed in Refs. [7,8]. The effect of gas convection in HPLEC growth was considered in some detail in Refs.…”