Three-dimensional modeling of melt flow and interface shape in the industrial liquid-encapsulated Czochralski growth of GaAs

Vizman, Daniel; Eichler, S.; Friеdrich, J.; Müller, G.

doi:10.1016/j.jcrysgro.2004.02.070

Cited by 26 publications

(25 citation statements)

References 8 publications

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“…The crystallization process is rather complicated since heat transfer system in a furnace is highly nonlinear. Due to the development of computer technology and computation techniques, numerical simulation has become a powerful tool for optimization of the directional solidification process and crystal growth process [4][5][6][7][8][9][10][11][12]. Since a directional solidification furnace has a nonlinear conjugated thermal system, transient simulation with global modeling is an essential tool for improvement of the directional solidification process from melting to cooling through the solidification process.…”

Section: Control Of Crystallization Processmentioning

confidence: 99%

“…It has been experimentally proved that the dislocation density is a function of carbon concentration in mc-Si [18]. The SiC precipitates can cause severe ohmic shunts in solar cells [5] and result in nucleation of new grains in mc-Si. Both carbon and SiC precipitates in mc-Si can greatly reduce the conversion efficiency of solar cells.…”

Section: Incorporation Of Impurity In Crystalsmentioning

confidence: 99%

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Crystallization of Silicon by a Directional Solidification Method

Kakimoto

2009

Advances in Materials Research

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Abstract. This chapter introduces crystallization process of multicrystalline silicon by using a directional solidification method. Numerical analysis, which includes convective, conductive, and radiative heat transfers in the furnace is also introduced. Moreover, a model of impurity segregation is included in this chapter. A new model for three-dimensional (3D) global simulation of heat transfer in a unidirectional solidification furnace with square crucibles was also introduced. Directional Solidification Method: Strengths and WeaknessesMulticrystalline silicon (mc-Si) has a large demand of photovoltaics to overcome difficulty of the present green problem [1]. The directional solidification method is a key method for large-scale production of mc-Si in highly efficient solar cells. The maximum efficiency of the solar cell based on mc-Si is 18%. However, the use of commercially available wafers typically results in solar cell efficiency of about 16% in industrial solar cell processes.There are many problems that must be solved to achieve high efficiency. Mc-Si has many dislocations and grain boundaries that are introduced during the solidification process. Moreover, Mc-Si crystals are grown in a crucible, a process that degrades purity of the crystals due to their attachment to the crucible wall. Such defects and impurity can reduce the conversion efficiency of solar cells. Therefore, we should control distributions of dislocations, grain boundaries, and impurities during the solidification process. In the recent studies, quasi single crystal or multicrystalline with large grain size have been grown by using a modified directional solidification methods [2,3].The directional solidification process has several merits. Square-shaped crystalline silicon can be grown by using a square-shaped crucible. When round-shaped crystals grown by the Czochralski method are used as raw materials for square-shaped solar cells, a large amount of waste of silicon materials

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Section: Control Of Crystallization Processmentioning

confidence: 99%

Section: Incorporation Of Impurity In Crystalsmentioning

confidence: 99%

Crystallization of Silicon by a Directional Solidification Method

Kakimoto

2009

Advances in Materials Research

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“…For the purpose of control of oxygen in a crystal, various configurations of magnetic field have been investigated and applied as an effective tool to control the melt convection of CZ growth [8][9][10][11][12]. However, the method of applying magnetic fields has been shown to cause several problems, such as low oxygen concentration, radial inhomogeneity of oxygen distribution in grown crystals, and long-term instability of the melt flow [13,14].…”

Section: Introductionmentioning

confidence: 99%

“…This is due to the requirements of large computer memory and long computation time for full 3D global modeling. A few coupling 2D/3D models have been developed in recent years to solve these problems [12,19]. In these models, local 3D analysis is carried out with thermal boundary conditions obtained from a quasi-2D global modeling.…”

Section: Introductionmentioning

confidence: 99%

“…Obviously, the 3D effects of the thermal system, especially 3D melt flow, can not be taken into account in quasi-2D global modeling, and the thermal boundary conditions for 3D local analysis can only be given in two dimensions. Furthermore, how to give the thermal boundary conditions for 3D local analysis basing on the solution of quasi-2D global modeling still remains a problem under discussion, since it was found [12] that the type of thermal boundary conditions (fixed temperature or heat flux) has a strong influence on the 3D results of interface shape and on melt convection in a crucible.…”

Section: Introductionmentioning

confidence: 99%

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