Prediction of proton cross sections for SEU in SRAMs and SDRAMs using the METIS engineer tool

Weulersse, C.; Miller, F.; Carrière, T.; Mangeret, R.

doi:10.1016/j.microrel.2015.06.117

Cited by 7 publications

(4 citation statements)

References 17 publications

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“…In this section, the SEU cross-section results are compared with the experimental data obtained from the literature [27,[32][33][34]. It is important to note that no fitting of the results was performed.…”

Section: Experimental Data Vs Simulation Resultsmentioning

confidence: 99%

Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells

Marques,

Wrobel,

Aguiar

et al. 2024

Electronics

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Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding of post-irradiation data. This work proposes a novel simplified methodology to evaluate the single-event effects (SEEs) cross-section. To validate the proposed approach, we consider the 6T SRAM cell a case study in four technological nodes. The modeling considers layout features and the doping profile, presenting ways to estimate unknown parameters. The accuracy and limitations are determined by comparing our simulations with actual experimental data. The results demonstrated a strong correlation with irradiation data, without requiring any fitting of the simulation results or access to process design kit (PDK) data. This proves that our approach is a reliable method for calculating the single-event upset (SEU) cross-section for heavy-ion irradiation.

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Section: Experimental Data Vs Simulation Resultsmentioning

confidence: 99%

Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells

Marques,

Wrobel,

Aguiar

et al. 2024

Electronics

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“…Total SET rate estimated with OMERE [17] for each circuit and its hardened version for the LEO (800km, 98°) and ISS (400km, 51.64°) orbit considering heavy ions and protons. Proton-induced SET rates are estimated with the METIS method [18,19]. The SET cross section average of each input signal is used.…”

Section: Discussionmentioning

confidence: 99%

“…Further, the in-orbit SET rates are predicted with OMERE package [17] for heavy ions and protons in Low-Earth Orbit (LEO) and International Space Station (ISS) orbits. Proton-induced SET rates are calculated from the heavy ion data using the METIS method [18,19]. Besides exploiting the transistor folding technique, the novelty of this work also lays on the usage of transistor folding with split in the active area of the transistors on different combinational logic gates to reduce area overhead.…”

Section: Introductionmentioning

confidence: 99%

Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients

Aguiar

Wrobel

Autran

et al. 2020

IEEE Trans. Nucl. Sci.

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Radiation hardening techniques can be extensively used in the design level to improve the robustness of VLSI circuits used in space applications. Accordingly, this work analyzes the efficiency of transistor folding layout in improving the Single-Event Transient robustness of digital circuits. Additionally, diffusion splitting is proposed to reduce the area overhead of multiple-finger designs. Besides increasing threshold Linear Energy Transfer, results show that both techniques can also reduce the overall cross-section and the in-orbit SET rate for protons and heavy ions in LEO and ISS orbits.

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“…However, previous studies have reported non-negligible contributions from thermal neutrons [1,17,19]. Protons have also been found to cause soft errors [13,20]. Therefore, we evaluated four secondary particles as contributors to the soft errors, including thermal neutrons (1-0.5 eV), intermediate-energy neutrons (0.5 eV-10 MeV), high-energy neutrons (10 MeV), and protons.…”

Section: Classification Of Secondary Particlesmentioning

confidence: 99%

The Contribution of Secondary Particles Following Carbon Ion Radiotherapy to Soft Errors in CIEDs

Kawakami,

Sakai,

Masuda

et al. 2024

IEEE Open J. Eng. Med. Biol.

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Introduction: While carbon ion radiotherapy is highly effective in cancer treatment, it has a high risk of causing soft error, which leads to malfunctions in cardiac implantable electrical devices (CIEDs). To predict the risk of malfunction prior to treatment, it is necessary to measure the reaction cross-sections and contributions to the soft error of secondary particles generated during treatments. Methods: A field-programmable gate array was used instead of CIEDs to measure soft errors by varying the energy spectrum of secondary particles. Results and discussion: The reaction cross-sections measured for each secondary particle were 3.0 × 10 −9 , 2.0 × 10 −9 , 1.3 × 10 −8 , and 1.5 × 10 −8 [cm 2 /Mb] for thermal neutrons, intermediate-energy neutrons, high-energy neutrons above 10 MeV, and protons, respectively. The contribution of high-energy neutrons was the largest among them. Our study indicates that to reduce the risk of soft errors, secure distance and appropriate irradiation directions are necessary.

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Prediction of proton cross sections for SEU in SRAMs and SDRAMs using the METIS engineer tool

Cited by 7 publications

References 17 publications

Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells

Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells

Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients

The Contribution of Secondary Particles Following Carbon Ion Radiotherapy to Soft Errors in CIEDs

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