“…As an important semiconductor material, zinc oxide (ZnO) possesses a broad band gap, and its band gap and lattice spacing are very close to those of GaN. − ZnO is also an intrinsic n-type material, so it can be employed as the n-type layer in an LED. In the last decades, many efforts have been made to realize ZnO-based thin-film LED devices, and most scientists studied the n-ZnO/p-GaN heterojunction LEDs. , Except for the traditional thin-film LED devices, ZnO can present many kinds of novel nanostructures, such as nanowires, − nanorods, , nanopins, and nanotubes, , and the ZnO nanodevices can demonstrate better light extraction and higher electroluminescent intensity. − Recently, Yang et al constructed blue-violet LEDs by covering solution-treated ZnO QDs with p-GaN/Mg . In the production of p-GaN/n-ZnO nanostructure LEDs, a ZnO nanoseed is usually necessary for ZnO nanorod growth.…”