p-GaN/n-ZnO Nanorod/CsPbBr₃ Quantum Dots Decorated with ZnO Nanoseeds for Light-Emitting Diodes

Abstract

In this paper, we report the dual-wavelength green-light emission from zinc oxide (ZnO)-nanoseed-decorated p-GaN (gallium nitride)/n-ZnO nanorod/CsPbBr3 quantum dots (QDs) light-emitting diodes (LEDs). At the same time, the effect of ZnO nanoseeds on the p-GaN/n-ZnO nanorod/CsPbBr3 QDs LED performance is deeply studied. ZnO nanoseeds were fabricated by magnetron sputtering and the sol–gel method; then ZnO nanorods were obtained on GaN by hydrothermal treatment to form the p-GaN/n-ZnO nanorod heterojunction, and green CsPbBr3 QDs were further deposited on ZnO nanorod arrays to realize LEDs. The results show that magnetron-sputtering ZnO nanoseeds can induce regular vertical ZnO nanorod arrays, and the corresponding device presents a better electroluminescence (EL) performance. The X-ray diffraction, atomic force microscopy, and EL mechanisms indicate that the p-GaN/n-ZnO nanorod with magnetron-sputtering ZnO nanoseeds has a better crystalline interface. Our results indicate that the p-GaN/n-ZnO nanorod/CsPbBr3 QDs heterojunction structure can be served as dual-wavelength LEDs, and magnetron-sputtering ZnO nanoseeds can give rise to a better EL performance.

Zinc Oxide and Metal Halide Perovskite Nanostructures Having Tunable Morphologies Grown by Nanosecond Laser Ablation for Light-Emitting Devices

“…The obtained enhancement at wavelengths >400 nm specifically points to the changing perovskite content, which has a stronger absorptivity throughout the visible region. The enhancement in absorption and luminescence properties of the ZnO nanostructured thin film supports the previously reported study based on CsPbBr 3 with ZnO NR systems …”

“…The enhancement in absorption and luminescence properties of the ZnO nanostructured thin film supports the previously reported study based on CsPbBr 3 with ZnO NR systems. 76 Analyzing the PL spectra of the patterned thin films having pure obtained from 1:5 perovskite deposition. On the other hand, there is still a slightly noticeable peak from CsPbBr 3 −Cs 4 PbBr 6 sensitized patterned ZnO thin film at ∼420 nm signifying the characteristic ZnO-originated NBEs in 1:1 perovskite deposited sample.…”

A perovskite/porous GaN crystal hybrid structure for ultrahigh sensitivity ultraviolet photodetectors

“…15 As a representative of the third generation semiconductors, gallium nitride (GaN) is the preferred candidate material for the manufacture of UV PDs due to its wide band gap (3.4 eV), and high saturation velocity, electron drift velocity and thermochemical stability. [16][17][18][19][20] However, the performance of GaN based UV PDs is still not suitable for practical applications due to its low light detection rate, quantum efficiency, low light absorption efficiency and rapid recombination of electron-hole pairs generated by light. [21][22][23][24] In addition to the advantages of bulk crystal materials, porous GaN crystals also possess many desired properties.…”

Quantum Dots and Their Applications: What Lies Ahead?

“…11 CsPbBr 3 QDs can also be used to decorate ZnO nanorods on GaN films to provide dual-wavelength green-light-emitting diodes. 12 Graphene oxide QDs/GaN composites are shown to enhance GaN PL. As for phosphors and white-light-emitting diodes, blueemitting CsPbBr 3 QDs can be used, 14 while hexagonal boron nitride sheets are used to improve the thermal stability of devices based on CdSe/CdS QDs.…”

“…Halide-exchanged CsPb­(Br/I) 3 and CsPbI 3 QDs showed enhanced structural and optical properties and can be applied to LEDs with 670 nm emission . CsPbBr 3 QDs can also be used to decorate ZnO nanorods on GaN films to provide dual-wavelength green-light-emitting diodes . Graphene oxide QDs/GaN composites are shown to enhance GaN PL …”