Precise release and insulation technology for vertical hall sensors and trench-defined MEMS

Sunier, R.; Monajemi, P.; Ayazi, Farrokh; Vancura, T.; Baltes, H.; Brand, Oliver

doi:10.1109/icsens.2004.1426457

Cited by 3 publications

(3 citation statements)

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“…3(d)) with the top and sidewall oxide confining the etching. This way, beams with a well-defined geometrical shape can be released [6]. In the present sample, poor oxide quality on the non-flat sidewalls allowed KOH attack from the sidewalls.…”

Section: Fabricationmentioning

confidence: 97%

“…After removing the dopant glass, the wafer surface is covered with a 0.8 µm thick PECVD oxide insulation layer. To release the stress-concentrating beams, a process adopted from the SCREAM technology [6] is used. In the first step, the beam shape is defined by patterning the oxide layer and transferring the pattern to the underlying silicon by etching 1.2 µm in an inductively coupled plasma (ICP) etcher.…”

Section: Fabricationmentioning

confidence: 99%

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Cantilever sensor with stress-concentrating piezoresistor design

Naeli

Brand

2005

IEEE Sensors, 2005.

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A novel approach for enhancing the sensitivity of piezoresistive cantilever sensors is presented. Thin piezoresistive clamped-clamped silicon beams are released on the surface of the cantilever by a micromachining process sequence combining deep-reactive ion etching and anisotropic wet etching of silicon. A deflection of the cantilever sensor yields a stress concentration in these micromachined piezoresistive structures. Finite element simulations indicate an increase in both force and displacement sensitivity compared to a conventional cantilever beam with the same thickness. Devices have been fabricated and initial characterization has been performed. Under constant tip deflection of the cantilever, the new piezoresistor design shows an increase in the relative resistance change by a factor of 5.2 compared to a cantilever with the same thickness and conventional piezoresistor design.

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Section: Fabricationmentioning

confidence: 97%

Section: Fabricationmentioning

confidence: 99%

Cantilever sensor with stress-concentrating piezoresistor design

Naeli

Brand

2005

IEEE Sensors, 2005.

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“…The releasing method is based on dry etching of a 2µm-thick sacrificial polysilicon layer (figure 12 f).A device sensitivity of 0.05 V/AT was achieved together with a minimum detectable magnetic flux density of 9 µT/√Hz at frequencies above 1 kHz at room temperature. Sunier et al (2004) reported on a vertical Hall sensor with precisely defined active area fabricated by a process combining deep-RIE silicon trench etching and anisotropic TMAH silicon wet etching. The fabrication process is showed in figure 13.…”

Section: Hall Sensorsmentioning

confidence: 99%