Precise Investigation of Domain Pinning Energy in GaMnAs Using Planar Hall Effect and Magnetoresistance Measurements

Distribution of magnetic domain pinning fields inGa1−xMnxAsferromagnetic films

“…Note, however, that M may be slightly misaligned with either ͓100͔ or ͓010͔ both due to the presence of the external magnetic field and to contributions from uniaxial anisotropy. 23 Since the energy difference ⌬E between the two directions of M varies as H cos H in Eq. ͑3͒, it can be continuously swept by varying the direction of H. This provides a direct handle for investigating the pinning energy 24 distribution of magnetic domains since only areas where the pinning energy is smaller than ⌬E can make a transition M ͓100͔ to M ͓010͔ during the scan of ⌬E.…”

Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film

“…Since the second and third terms in Eq. (1) rely on the normal and in-plane components of magnetization, the Hall effect measurements can be used to study the details of magnetic anisotropy of the ferromagnetic film [20][21][22]. The planar Hall resistance (PHR) data taken at 3 K with several different orientations of the external magnetic field within the film plane are shown in Fig.…”

Influence of uniaxial anisotropy on the domain pinning fields of ferromagnetic Ga1−xMnxAs films

“…5,6 Cowburn et al 7 introduced the concept of the magnetic pinning field in ferromagnets when they described the reversal of magnetization in Fe film with strong cubic anisotropy, which results in two magnetic easy axes in the ͗100͘ direction. Important factors in magnetization reversal are magnetic domain pinning fields, which determine the external field strength required for reorientation of magnetization.…”