Precise determination of aluminum content in AlGaAs

Chang, Kai; Lee, C. P.; Wu, Jiabin; Liu, D. G.; Liou, D. C.; Wang, M. H.; Chen, L. J.; Marais, Mario

doi:10.1063/1.349030

Cited by 23 publications

(2 citation statements)

References 17 publications

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“…There are several available methods to assess the composition of an Al x Ga 1−x As crystal such as high-resolution x-ray diffraction (HRXRD) [11][12][13][14], TEM [11], photoluminescence (PL) [11,12,14], Raman spectroscopy [12,13], secondary ion mass spectroscopy (SIMS) [15,16], and x-ray photoelectron spectroscopy [17]. The main limitation with HRXRD, PL and Raman is that they work well on bulk samples, or with single layers on or near the surface, but cannot analyse many-layered structures; especially if the structure has multiple layers with similar compositions.…”

Section: Determining Al X Ga 1−x As Compositionmentioning

confidence: 99%

A detailed comparison of measured and simulated optical properties of a short-period GaAs/Al_xGa_1−xAs distributed Bragg reflector

Wilson

Hodgson

Robson

et al. 2020

Semicond. Sci. Technol.

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A 6-period GaAs/Al0.9Ga0.1As distributed Bragg reflector (DBR) has been grown and its optical properties have been both measured and simulated. Incremental improvements were made to the simulation, allowing it to account for internal consistency error, incorrect layer thicknesses, and absorption due to substrate doping to improve simulation accuracy. A compositional depth profile using secondary-ion mass spectrometry (SIMS) has been taken and shows that the Al fraction averages 88.0% ± 0.3%. It is found that the amplitude of the transmission is significantly affected by absorption in the n-doped GaAs substrate, even though the energy of the transmitted light is well below the GaAs band gap. The wavelength of the features in the transmission spectrum are mostly affected by DBR layer thicknesses. On the other hand, the transmission spectrum is found to be relatively tolerant to changes to Al fraction.

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Section: Determining Al X Ga 1−x As Compositionmentioning

confidence: 99%

A detailed comparison of measured and simulated optical properties of a short-period GaAs/Al_xGa_1−xAs distributed Bragg reflector

Wilson

Hodgson

Robson

et al. 2020

Semicond. Sci. Technol.

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“…Herein, AlGaAs has a lattice constant that varies linearly between that of AlAs, 5.661 angstroms, and that of GaAs is 5.653 angstroms, depending on the mole fraction of aluminum [21]. The alternations of the aluminum fraction in the AlGaAs layer modulate the band-gap [22] and hence, one can adjust the barrier height of the designed device to match the required photon energy. Similar to GaAs/AlGaAs [23], research has been carried out on the number of other semiconductor heterostructures having various, material combinations emitter/barrier architectures and doping densities for infrared (IR) detector development [6,[24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Recent Progress on Extended Wavelength and Split-Off Band Heterostructure Infrared Detectors

Ghimire

Jayaweera²,

Somvanshi

et al. 2020

Micromachines

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The use of multilayer semiconductor heterojunction structures has shown promise in infrared detector applications. Several heterostructures with innovative compositional and architectural designs have been displayed on emerging infrared technologies. In this review, we aim to illustrate the principles of heterostructure detectors for infrared detection and explore the recent progress on the development of detectors with the split-off band and threshold wavelength extension mechanism. This review article includes an understanding of the compositional and the architectural design of split-off band detectors and to prepare a database of their performances for the wavelength extension mechanism. Preparing a unique database of the compositional or architectural design of structures, their performance, and penetrating the basics of infrared detection mechanisms can lead to significant improvements in the quality of research. The brief outlook of the fundamentals of the infrared detection technique with its appropriateness and limitations for better performance is also provided. The results of the long-term study presented in this review article would be of considerable assistance to those who are focused on the heterostructure infrared detector development.

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Interdiffusion phenomena in InGaAs/GaAs superlattice structures

Sarıkavak¹,

Öztürk

Mammadov

et al. 2010

Cryst. Res. Technol.

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We have studied structural properties of InGaAs/GaAs superlattice sample prepared by Molecular Beam Epitaxy (MBE) using high resolution X-ray diffractometer (HRXRD). Increasing strain relaxation and defect generations are observed with the increasing Rapid Thermal Annealing (RTA) temperature up to 775 °C. The higher temperatures bring out relaxation mechanisms; interdiffusion and favored migration. The defect structure and the defects which are observed with the increasing annealing temperature were analyzed. Firstly, the in-plane and out-of-plane strains after the annealing of sample were found. Secondly, the structural defect properties such as the parallel X-ray strain, perpendicular X-ray strain, misfit, degree of relaxation, x composition, tilt angles and dislocation that are obtained from X-ray diffraction (XRD) analysis were carried out at every temperature. As a result, we observed that the asymmetric peaks especially in asymmetric (224) plane was affected more than symmetric and asymmetric planes with lower polar or inclination angles due to c-direction at low temperature. These structural properties exhibit different unfavorable behaviors for every reflection direction at the increasing temperatures. The reason is the relaxation which is caused by spatially inhomogeneous strain distribution with the increasing annealing temperature. In the InGaAs superlattice samples, this process enhances preferential migration of In atoms along the growth direction. Further increase in the annealing temperature leads to the deterioration of the abrupt interfaces in the superlattice and degradation in its structural properties.

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Precise determination of aluminum content in AlGaAs

Cited by 23 publications

References 17 publications

A detailed comparison of measured and simulated optical properties of a short-period GaAs/Al_xGa_1−xAs distributed Bragg reflector

A detailed comparison of measured and simulated optical properties of a short-period GaAs/Al_xGa_1−xAs distributed Bragg reflector

Recent Progress on Extended Wavelength and Split-Off Band Heterostructure Infrared Detectors

Interdiffusion phenomena in InGaAs/GaAs superlattice structures

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Precise determination of aluminum content in AlGaAs

Cited by 23 publications

References 17 publications

A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1−xAs distributed Bragg reflector

A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1−xAs distributed Bragg reflector

Recent Progress on Extended Wavelength and Split-Off Band Heterostructure Infrared Detectors

Interdiffusion phenomena in InGaAs/GaAs superlattice structures

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A detailed comparison of measured and simulated optical properties of a short-period GaAs/Al_xGa_1−xAs distributed Bragg reflector

A detailed comparison of measured and simulated optical properties of a short-period GaAs/Al_xGa_1−xAs distributed Bragg reflector