Power regulation and electromigration in platinum microwires

Elíasson, Ottó; Vasile, Gabriel; Jónsson, Sigurður Ægir; Gudjonsson, Gudjon; Arikan, Mustafa; Ingvarsson, Snorri

doi:10.1063/1.4901937

Cited by 8 publications

(12 citation statements)

References 16 publications

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“…The subscript i denotes the material, being Au or Pt. All these current densities are below the critical current densities for Au and Pt, which are around 10 10 A m −2 [57] and 10 11 A m −2 [58], respectively. Therefore, any possible combination of heater width and heater spacing will give a resistive that can withstand its operation.…”

Section: Resistive Heater Structure Designmentioning

confidence: 85%

Disposable DNA Amplification Chips with Integrated Low-Cost Heaters †

et al. 2020

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Fast point-of-use detection of, for example, early-stage zoonoses, e.g., Q-fever, bovine tuberculosis, or the Covid-19 coronavirus, is beneficial for both humans and animal husbandry as it can save lives and livestock. The latter prevents farmers from going bankrupt after a zoonoses outbreak. This paper describes the development of a fabrication process and the proof-of-principle of a disposable DNA amplification chip with an integrated heater. Based on the analysis of the milling process, metal adhesion studies, and COMSOL MultiPhysics heat transfer simulations, the first batch of chips has been fabricated and successful multiple displacement amplification reactions are performed inside these chips. This research is the first step towards the development of an early-stage zoonoses detection device. Tests with real zoonoses and DNA specific amplification reactions still need to be done.

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Section: Resistive Heater Structure Designmentioning

confidence: 85%

Disposable DNA Amplification Chips with Integrated Low-Cost Heaters †

et al. 2020

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“…In our research on electromigration and the time-tofailure of Pt microheaters, we have observed a gradual decrease with time in R, when microheaters are excited by electric current at constant power 23 . We know from previous work that such changes in R do not affect the thermal impedance dT /dP as this is governed by the thermal properties of the surroundings, most importantly the substrate's thermal conductivity 21 .…”

Section: Introductionmentioning

confidence: 81%

“…We subject our microheaters to a high current density, and wait until they eventually fail due to electromigration, in order to test their time-tofailure. By switching the current polarity at a frequency of f = 20 kHz (referred to as AC current stress in the article) we observed on the order of 10 3 -fold increase in the time-to-failure of our heaters, compared to when they are biased at the same power level at DC 23 . Depending on the bias, our measurements can take quite some time, the longest measurement on a single heater lasted for over a week.…”

Section: Sample Propertiesmentioning

confidence: 90%

Grain growth in Pt microheaters subjected to high current density under constant power

Elíasson

Vasile

Ingvarsson

2018

J. Phys. D: Appl. Phys.

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When 50 nm thick Pt microheaters of lateral dimensions 1 × 10 µm 2 are subjected to high electric power their resistance R rises, as expected. Following an initial rise however there is a gradual decrement in R while constant electric power dissipation is maintained. We find that this lowering in R is accompanied by grain growth in the polycrystalline thin Pt film of our heaters. This is confirmed by XRD measurements and SEM imaging. Similar growth in grain size is observed in thin Pt films that are oven-annealed at high temperatures. Thus we argue that maintaining high power dissipation in a microheater has the same effect on its material structure as post-annealing. We observe the in-plane grain size of a 50 nm thick as-grown Pt film/heater to be D = 15 nm. When post-annealed at a temperature of T = 600 • C for 30 min, D = 30 nm, compared with when electric current is run through a heater we estimate the mean crystalline length to be D = 35 nm.

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“…In the literature, several process variables have been considered to control and monitor the electromigration process in different devices, such as dr/dt, 15,16 (dr/dt)/r, 11,17 d(1/r)/dt, 6,18 or P r , 19 with r and P r as the resistance of and the dissipated power in the device, respectively. Although all these variables are related to the speed of electromigration, a solid motivation for the particular selected process variable is lacking in most references.…”

Section: Conceptual Description Of Electromigrationmentioning

confidence: 99%

Controlled electromigration protocol revised

Zharinov

Baumans

Silhanek

et al. 2018

Review of Scientific Instruments

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Electromigration has evolved from an important cause of failure in electronic devices to an appealing method, capable of modifying the material properties and geometry of nanodevices. Although this technique has been successfully used by researchers to investigate low dimensional systems and nanoscale objects, its low controllability remains a serious limitation. This is in part due to the inherent stochastic nature of the process, but also due to the inappropriate identification of the relevant control parameters. In this study, we identify a suitable process variable and propose a novel control algorithm that enhances the controllability and, at the same time, minimizes the intervention of an operator. As a consequence, the algorithm facilitates the application of electromigration to systems that require exceptional control of, for example, the width of a narrow junction. It is demonstrated that the electromigration rate can be stabilized on pre-set values, which eventually defines the final geometry of the electromigrated structures. Published by AIP Publishing. https://doi

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Power regulation and electromigration in platinum microwires

Cited by 8 publications

References 16 publications

Disposable DNA Amplification Chips with Integrated Low-Cost Heaters †

Disposable DNA Amplification Chips with Integrated Low-Cost Heaters †

Grain growth in Pt microheaters subjected to high current density under constant power

Controlled electromigration protocol revised

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