Power PiN diode model for PSPICE simulations

Abstract

Absfrucf-An accurate physics based model for power PIN diodes is derived and implemented as a subcircuit into the Pspice circuit simulator. The model is bssed on an equivalent circuit representation of the base region, obtained by solving the ambipolar diffusion equation with the Finite Difference Method. Good agreement is obtained by comparing the results of the proposed PIN diode model with experimental and simuiated results taken from the literature.

A 1200 V/200 A Half-Bridge Power Module Based on Si IGBT/SiC MOSFET Hybrid Switch

“…It is made up of three parts. The first part is based on the finite difference method (FDM) [23] to calculate the excess carrier concentration in the base region under high level injection. I 1 and I n+1 are the boundary conditions to solve the ambipolar diffusion equation.…”

Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling

“…The boundary conditions for the solution are set by the PN-and N-N+ junctions of the body diode. Reconstruction of ADE using Fourier series is the most computationally inexpensive solution to achieve the plasma behaviour of the device [9][10][11][12][13][14][15][16][17][18]. Drift layer conductivity modulation is the phenomenon through which low conduction losses are enabled in PiN diodes and depends on minority carrier injection into the drift region.…”

Simulation of switched-mode power supplies (SMPS) through an accurate non-quasi-static SPICE power diode model

“…In this contribution we present the application of a novel non-quasi-static equivalent circuit model of PiN diodes to the simulation of realistic SMPSs. The model is based on the solution of the ADE with the Finite Difference Method (FDM); the numerical algorithm is directly implemented as a SPICE subcircuit [3]. Conductivity modulation, emitter recombination effects in the highly doped end regions, carrier-carrier scattering effects, minority carrier injection in the depleted region and the dynamic of the space-charge voltage build-up are accounted for.…”

“…However, work is in progress to gain a better understanding of the influence of such parameter and to relate it to the device physics. A more dotailed description of the mathematical derivation of the modol and its implementation can be found in [3]. PiN diodes have a 50 ptm long base, with doping level in the order of 1014 cm3.…”