Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

Soltani, A.; Gerbedoen, Jean-Claude; Cordier, Y.; Ducatteau, D.; Rousseau, Michel; Chmielowska, Magdalena; Ramdani, Mohammed Réda; Jaeger, J.C. de

doi:10.1109/led.2013.2244841

Cited by 49 publications

(27 citation statements)

References 11 publications

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“…G ALLIUM nitride high electron mobility transistors (GaN-HEMTs) have demonstrated their capability to reach high power, operating in millimeter range [1]- [6]. Recently, remarkable results have been obtained on silicon substrate [4]- [6].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, remarkable results have been obtained on silicon substrate [4]- [6]. Silicon substrates offer an interesting alternative to silicon carbide through their low cost and their large area availability [7].…”

Section: Introductionmentioning

confidence: 99%

“…Marti et al [5] have reported a record AlGaN/GaN HEMT cutoff frequency of 150 GHz and output power density of 2 W/mm at 40 GHz. Besides, a very recent output power density record of 3.3 W/mm has been obtained at 40 GHz by Institut d'Electronique, Manuscript Microélectronique et Nanotechnologie [6]. From a technological point of view, the reduction of the gate length is a well known way to increase the cutoff frequency.…”

Section: Introductionmentioning

confidence: 99%

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Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Rennesson

Lecourt

Defrance

et al. 2013

IEEE Trans. Electron Devices

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In this paper, we propose to optimize Al 0.29 Ga 0.71 N/GaN heterostructures on silicon substrate to obtain high electron mobility transistors featuring highpower/frequency performances. The polarization electric fields are engineered by varying the layer thicknesses of the cap and the barrier, and by changing the type of buffer (GaN or AlGaN). The aim of this paper is to find the best tradeoff between the active layer thickness reduction and the achievement of a reasonable drain current to satisfy the requirements for high performances. The optimum heterostructure device presents an output power density of 1.5 W/mm at 40 GHz, among the best reported on silicon substrate.Index Terms-AlGaN/GaN, high electron mobility transistor (HEMT), Ka-band, millimeter-wave transistor, power density.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Rennesson

Lecourt

Defrance

et al. 2013

IEEE Trans. Electron Devices

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“…This is followed by a 25 nm undoped Al0.32Ga0.68N barrier and a 1 nm GaN cap layer. The fabrication process flow is similar to that reported in [6]. The spacing between Ohmic contacts varies from L1 = 4 μm, L2 = 8 μm, L3 = 12 μm and L4 = 18 μm.…”

Section: Introductionmentioning

confidence: 96%

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices

Ahmeda

Ubochi

Kálna

et al. 2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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Abstract-The interplay of self-heating and polarization affecting the current is studied in Al0.32Ga0.68N/AlN/GaN/Al0.1Ga0.9N Transmission Line Model (TLM) heterostructures with a scaled source-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental characteristics using an electro-thermal model. The electro-thermal simulations show hot-spots at the edge of the drain contact due to a large electric field affecting the device reliability. Due to the applied electrical stress, the total polarization, relative to the 18 μm heterostructure, decreases by 7 %, 10 % and 17% during a reduction of the source-to-drain distance to the 12 μm, 8 μm, and 4 μm, respectively, as a result of the additional strain induced by electrical stress. This additional stress on source/drain contacts reduces the polarization at the surface as a result of the inverse piezoelectric effect.

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“…Thanks to improvements in the epitaxial growth and the fabrication processes, the operating frequency and output power steadily increased with time [1,2,3]. At W-band, impressive output powers have been reported for MMIC amplifiers based on GaN HEMTs grown SiC [4].…”

Section: Introductionmentioning

confidence: 99%

<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math> </inline-formula>-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

Marti

Lugani

Carlin

et al. 2016

IEEE Electron Device Lett.

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We demonstrate W-Band MMIC amplifiers based on AlInN/GaN HEMTs grown on Silicon. Our MMIC process was fully characterized to 110 GHz and a process design kit (PDK) generated to enable circuit design. A fabricated two-stage amplifier with an output device width of 100 µm shows a saturated output power of 18.3 dBm and a gain of 8.2 dB at 94 GHz with input/output return losses of -10 dB or better from 90 to 100 GHz. A simulation model confirmed by experimental data revealed that performance is limited by current collapse and that a doubling of output power could be possible by resolving collapse limitations, showing the considerable potential of GaN-on-Si HEMT technology for low-cost millimeter-wave power electronic applications. Index Terms-AlInN/GaN-on-Si, HEMTs, MMIC, multistage amplifiers, W-band.

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Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

Cited by 49 publications

References 11 publications

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices

<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math> </inline-formula>-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

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