Power Modules for Pulsed Power Applications Using Phase Change Material

Shao, Wei; Li, Ran; Zeng, Zheng; Wu, Ruizu; Mawby, Philip; Jiang, Huaping; Kastha, Debaprasad; Bajpai, Prabodh

doi:10.1109/3dpeim.2018.8525239

Cited by 7 publications

(5 citation statements)

References 13 publications

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“…The package level microchannels are made on a Si substrate in which the Si substrate functions as a microfluidic heat sink. Package-level cooling is capable of cooling for heat fluxes up to 500 W/cm 2 [129] while microchannels closer to the semiconductor die are effective for heat fluxes up to (a) [116], [8] (b) [117] (c) [118], [119] (d) Proposed solution Fig. 8: Combination of PCM and metals in order to have the advantages of PCM and metals at the same time.…”

Section: B Microchannel Coolingmentioning

confidence: 99%

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Bhadoria

Dijkhuizen

Raj

et al. 2023

IEEE Trans. Power Electron.

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With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the over-current performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for over-current related temperatures in excess of 200 • C are discussed. The paper also discusses potential technologies which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase change materials which can be considered for high-temperature operations.

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Section: B Microchannel Coolingmentioning

confidence: 99%

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Bhadoria

Dijkhuizen

Raj

et al. 2023

IEEE Trans. Power Electron.

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“…Another method is to add heat-absorbing material below the chip. One such method using combinations of phase change materials (PCMs) with metal containers has been investigated in [25][26][27][28][29] for the duration of 3-30 s. PCMs have high latent heat of fusion and low thermal conductivity; hence, the metal containers (being an excellent thermal conductor) in them effectively provide paths of lower thermal resistance such that the heat can be transferred to the PCM. This method suffers from the disadvantage that the junction temperature during steady-state operation is also increased due to the increase in the overall thermal resistance for the heat flow towards the heat sink.…”

Section: Introductionmentioning

confidence: 99%

“…The thermal response for the heat-absorbing container with PCMs depends significantly on the relative content of the PCMs in question. The optimum relative content of PCM is in the range 30-50%, considering the trade-off between response time delay due to PCM melting and thermal conductivity of overall composite structure [27,32,33]. Another application of PCM with metallic structure is directly in the Si chip substrate for transient applications of 500 W/cm 2 for up to 100 ms [34].…”

Section: Introductionmentioning

confidence: 99%

Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip

Bhadoria,

Dijkhuizen,

Zhang

et al. 2024

Energies

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An increasing share of fluctuating and intermittent renewable energy sources can cause over-currents (OCs) in the power system. The heat generated during OCs increases the junction temperature of semiconductor devices and could even lead to thermal runaway if thermal limits are reached. In order to keep the junction temperature within the thermal limit of the semiconductor, the power module structure with heat-absorbing material below the chip is investigated through COMSOL Multiphysics simulations. The upper limits of the junction temperature for Silicon (Si) and Silicon Carbide (SiC) are assumed to be 175 and 250 ∘C, respectively. The heat-absorbing materials considered for analysis are a copper block and a copper block with phase change materials (PCMs). Two times, three times, and four times of OCs would be discussed for durations of a few hundred milliseconds and seconds. This article also discusses the thermal performance of a copper block and a copper block with PCMs. PCMs used for Si and SiC are LM108 and Lithium, respectively. It is concluded that the copper block just below the semiconductor chip would enable OC capability in Si and SiC devices and would be more convenient to manufacture as compared to the copper block with PCM.

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“…With the increasing demand for efficient energy systems to reduce the mismatch between supply and demand of energy, there is a need to develop efficient thermal energy storage (TES) systems that can store energy from time-variable sources and match timevariable demands with a constant output source [1]. The interest in energy storage devices based on latent energy storage using phase change materials (PCMs) is rapidly growing due to their isothermal nature and high energy storage density [2], resulting in compact and reduced-weight, lower cost systems [3,4] when compared to sensible thermal energy storage systems. Since there are many types of PCMs, which melt at widely varying temperature ranges, they have been used in diverse applications, such as solar heating [2], peak-load shifting for building cooling [3], pulsed-power applications [4], and space energy storage applications [5].…”

Section: Introductionmentioning

confidence: 99%

“…The interest in energy storage devices based on latent energy storage using phase change materials (PCMs) is rapidly growing due to their isothermal nature and high energy storage density [2], resulting in compact and reduced-weight, lower cost systems [3,4] when compared to sensible thermal energy storage systems. Since there are many types of PCMs, which melt at widely varying temperature ranges, they have been used in diverse applications, such as solar heating [2], peak-load shifting for building cooling [3], pulsed-power applications [4], and space energy storage applications [5].…”

Section: Introductionmentioning

confidence: 99%

A 1D Reduced-Order Model (ROM) for a Novel Latent Thermal Energy Storage System

2022

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Phase change material (PCM)-based thermal energy storage (TES) systems are widely used for repeated intermittent heating and cooling applications. However, such systems typically face some challenges due to the low thermal conductivity and expensive encapsulation process of PCMs. The present study overcomes these challenges by proposing a lightweight, low-cost, and low thermal resistance TES system that realizes a fluid-to-PCM additively manufactured metal-polymer composite heat exchanger (HX), based on our previously developed cross-media approach. A robust and simplified, analytical-based, 1D reduced-order model (ROM) was developed to compute the TES system performance, saving computational time compared to modeling the entire TES system using PCM-related transient CFD modeling. The TES model was reduced to a segment-level model comprising a single PCM-wire cylindrical domain based on the tube-bank geometry formed by the metal fin-wires. A detailed study on the geometric behavior of the cylindrical domain and the effect of overlapped areas, where the overlapped areas represent a deviation from 1D assumption on the TES performance, was conducted. An optimum geometric range of wire-spacings and size was identified. The 1D ROM assumes 1D radial conduction inside the PCM and analytically computes latent energy stored in the single PCM-wire cylindrical domain using thermal resistance and energy conservation principles. The latent energy is then time-integrated for the entire TES, making the 1D ROM computationally efficient. The 1D ROM neglects sensible thermal capacity and is thus applicable for the low Stefan number applications in the present study. The performance parameters of the 1D ROM were then validated with a 2D axisymmetric model, typically used in the literature, using commercially available CFD tools. For validation, a parametric study of a wide range of non-dimensionalized parameters, depending on applications ranging from pulsed-power cooling to peak-load shifting for building cooling application, is included in this paper. The 1D ROM appears to correlate well with the 2D axisymmetric model to within 10%, except at some extreme ranges of a few of the non-dimensional parameters, which lead to the condition of axial conduction inside the PCM, deviating from the 1D ROM.

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Power Modules for Pulsed Power Applications Using Phase Change Material

Cited by 7 publications

References 13 publications

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip

A 1D Reduced-Order Model (ROM) for a Novel Latent Thermal Energy Storage System

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