Power Loss Analysis of Medium Voltage Three-Phase Converters using 15 kV/40 A SiC N-IGBT

Madhusoodhanan, Sachin; Krishna, M.; Tripathi, Awneesh; Kadavelugu, Arun; Patel, Dhaval; Bhattacharya, Subhashish

doi:10.1109/jestpe.2016.2587666

Cited by 38 publications

(18 citation statements)

References 28 publications

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“…The switching energy loss of SiC MOSFET expressed as follows: By substituting equations (12), (13) and (17) in (20), the SiC diode conduction loss is calculated as:…”

Section: Total Power Loss Model Analysis Of Sic 3l-npc Invertermentioning

confidence: 99%

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Power Loss Model and Efficiency Analysis of Three-Phase Inverter Based on SiC MOSFETs for PV Applications

et al. 2019

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This paper presents the power loss model analysis and efficiency of three-level neutral-pointclamped (3L-NPC) inverter that is widely employed in solar photovoltaic energy conversion system. A silicon carbide (SiC) 3L-NPC inverter is developed in this paper by employing wide bandgap semiconductor power devices, such as SiC MOSFET and SiC diode (SiC D). These devices are used due to their superior characteristics over silicon (Si) semiconductor devices for the reduction of inverter power losses, and as a result, an improving efficiency at the high switching frequency. Accurate and detailed power loss calculation formula and power loss distribution over switching devices of the SiC 3L-NPC inverter are derived according to the modulation technique and inverter operation. The switching energy loss of SiC MOSFET is then measured and determined experimentally via inductive clamp double pulse test (DPT) at the real working condition of the circuit. Afterward, this experimental data is used in the thermal description file of the device's library of PLECS simulation software to determine the total power loss of SiC 3L-NPC inverter. The developed simulation model replicates the real operating conditions of the 3L-NPC inverter. This method gives results close to the practical test. Finally, the power loss of SiC 3L-NPC inverter is measured and compared with the theoretical results. Furthermore, SiC MOSFET and SiC D are employed to achieve high system efficiency at the high switching frequency. The results verify the features of SiC 3L-NPC inverter, the corresponding modulation technique used and their effects on reducing and improving power loss in solar SiC photovoltaic inverters. INDEX TERMS Three-level neutral-point clamped inverter (3L-NPC), SiC MOSFET, power loss, DPT-double pulse test, PLECS.

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“…The switching energy loss of SiC MOSFET expressed as follows: By substituting equations (12), (13) and (17) in (20), the SiC diode conduction loss is calculated as:…”

Section: Total Power Loss Model Analysis Of Sic 3l-npc Invertermentioning

confidence: 99%

“…The high efficiency of a simulation-based three-level inverter using SiC MOSFET is discussed in [19], but the device losses are not validated through experimentation. Thermal loss of low voltage-SiC-IGBT device-based power inverter is presented in the literature [20], [21].…”

Section: Introductionmentioning

confidence: 99%

Power Loss Model and Efficiency Analysis of Three-Phase Inverter Based on SiC MOSFETs for PV Applications

et al. 2019

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“…The higher wide band-gap, dielectric breakdown field strength and thermal conductivity allow to increase the operational switching frequency and voltage without increasing the losses. With a higher switching frequency, the passive filtering components have smaller size and the cooling requirements can be relaxed, therefore, the overall system volume and weight are reduced [11][12][13][14][15]. In order to compare the performance, both technologies, i.e.…”

Section: A Power Semiconductor Devicesmentioning

confidence: 99%

Power quality enhancement by SiC Active Power Filters in Oil and Gas Platforms

Vitoi

Brandão

Tedeschi

2019

2019 IEEE Energy Conversion Congress and Exposition (ECCE)

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This paper presents a study for active power filters' (APFs) application in a typical offshore O&G platform, where reactive power compensation and current harmonic mitigation are often needed to meet minimum power quality requirements. As size and weight are critical constraints in offshore installations, possible benefits of using Silicon Carbide (SiC) switches for the APF implementation are also investigated. Different compensation strategies have been compared, varying the connection point of the APF between two different voltage levels and assigning the APFs different compensation targets. Improvements in Power Quality (PQ) indexes as well as APFs rating, efficiency and design complexity have been considered for both SiC and Silicon-based solutions to identify trade-offs suitable for the considered application.

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“…Silicon carbide insulated gate bipolar transistors (SiC-IGBTs) are characterized by higher breakdown voltage, fast operating frequency, high power speed and high current density [5], therefore, they have better heat resistance than conventional Si-IGBTs and a wide potential application. At the same time, the highest operating junction temperature of the SiC-IGBT can be as high as 175 °C, which allows the device itself be more adaptable to higher power density [6]. SiC-IGBT has become an ideal device in high-voltage and high-current applications, for instance, switching power supplies, AC motors, radar transmitters, inverters, and other power electronic devices [7].…”

Section: Introductionmentioning

confidence: 99%

Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

Zhang

Huang²,

Cheng

et al. 2020

Frattura Ed Integrità Strutturale

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Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC materials and IGBT devices, and becomes an ideal device for high-frequency and high-temperature electronic devices. Even so, the thermal fatigue failure of SiC IGBT, which directly determines its application and promotion, is a problem worthy of attention. In this study, the thermal fatigue behavior of SiC-IGBT under cyclic temperature cycles was investigated by finite element method. The finite element thermomechanical model was established, and stress-strain distribution and creep characteristics of the SnAgCu solder layer were obtained. The thermal fatigue life of the solder was predicted by the creep, shear strain and energy model respectively, and the failure position and factor of failure were discussed.

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Power Loss Analysis of Medium Voltage Three-Phase Converters using 15 kV/40 A SiC N-IGBT

Cited by 38 publications

References 28 publications

Power Loss Model and Efficiency Analysis of Three-Phase Inverter Based on SiC MOSFETs for PV Applications

Power Loss Model and Efficiency Analysis of Three-Phase Inverter Based on SiC MOSFETs for PV Applications

Power quality enhancement by SiC Active Power Filters in Oil and Gas Platforms

Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

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