Power-limiting mechanisms in VECSELs

Bedford, Robert; Kolesík, M.; Chilla, J. L. A.; Reed, Murray K.; Nelson, Thomas R.; Moloney, Jerome V.

doi:10.1117/12.607428

Cited by 33 publications

(20 citation statements)

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“…Applying similar design principles, but using a combination of large pump spot sizes (0.5-0.9 mm) and thin-devices on diamond submounts for heat removal, very impressive performance from ∼ 980 nm and 1060 nm SDLs have been achieved [14,46,76,77]. The highest powers recorded to-date reach 30 W at 980 nm with a multimode beam (M 2 ∼ 3) [14] and 12 W at 1060 nm with TEM 00 emission [77].…”

Section: Nm-1100 Nm Sdlsmentioning

confidence: 78%

“…The power-scalability of single chip SDLs is expected to be limited by thermal constraints as discussed in paragraph 2.2. and references [11,76,98] or by laser action in the semiconductor plane [76]. Heatspreader-bonded devices show reduced thermal resistance for small spot sizes compared to their thin-device counterparts with the difference increasing with mirror thermal resistance [54].…”

Section: Power Scalingmentioning

confidence: 99%

See 1 more Smart Citation

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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Section: Nm-1100 Nm Sdlsmentioning

confidence: 78%

Section: Power Scalingmentioning

confidence: 99%

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

View full text Add to dashboard Cite

show abstract

“…The 2 Â 2 mm 2 samples separated from the wafers were joined with the diamond plates using capillary bonding (Liau 2000). The shapes of the semiconductor samples were intentionally irregular in order to suppress possible lasing in the lateral direction (Bedford et al 2005). The bonding took place at the room temperature and the samples were left under tension in order to totally accomplish the process.…”

Section: Methodsmentioning

confidence: 99%

Highly efficient heat extraction by double diamond heat-spreaders applied to a vertical external cavity surface-emitting laser

et al. 2017

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We compare the heat extraction efficiency for a standard Vertical External Cavity Surface-Emitting Laser and the distributed Bragg reflector (DBR)-free structure employing a single and double diamond heat-spreaders, respectively. Both heterostructures grown by Molecular Beam Epitaxy employ two identical active regions designed for emission at 980 nm. We show that the thermal resistance has been decreased 15 times when there is no DBR and heat is extracted from both side of active region. For DBR-free laser no thermal rollover of power conversion characteristic was observed in the range of considered input powers.

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“…Pump beams are typically highly spatially multimoded, only an approximately uniform pump light distribution is required across the VECSEL laser mode aperture. If the pump spot becomes too large in diameter, in-plane amplified spontaneous emission (ASE) can potentially deplete laser gain [159]. Such in-plane ASE, if not controlled, will limit the lateral size of the laser pump spot and thus limit scaling of the output power of the laser.…”

Section: 33mentioning

confidence: 99%

“…Output power scaling of VECSELs will continue to be a topic of interest. Power scaling can utilize a number of approaches, such as increasing mode area and pump spot size while controlling and limiting the in-plane amplified spontaneous emission that can deplete the gain [159]. Further improvements in efficient heat removal (Chapter 2) will help, such as using the highest thermal conductivity diamond heat spreaders and heat sinks [107], front and back side heat removal from the OPS chip, design and fabrication of low thermal impedance semiconductor structures, and so on.…”

Section: Current and Future Research Directionsmentioning

confidence: 99%

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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Power-limiting mechanisms in VECSELs

Cited by 33 publications

References 0 publications

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Highly efficient heat extraction by double diamond heat-spreaders applied to a vertical external cavity surface-emitting laser

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

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