Power device trends for high-power density operation of power electronics system

Saito, Wataru

doi:10.7567/jjap.53.04ep02

Cited by 18 publications

(5 citation statements)

References 20 publications

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“…[2][3][4][5][6][7][8][9] Through these technologies, over 15 years R on A has been reduced to a factor of 1. 10) To continue the R on A trend, several groups demonstrated further R on A reduction by multistep FP structure. [11][12][13] However, the R on A trend is facing the theoretical limit even with the FP technology.…”

Section: Introductionmentioning

confidence: 99%

Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method

Saito

2023

Jpn. J. Appl. Phys.

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As a simple design method, zoomed response surface (RS) method is useful for automatic design of low-voltage power MOSFETs. Low-voltage MOSFET characteristics have been improved continuously considering with not only low power loss but also low cost to answer request to high-performance system. Complicated requirements lead long development schedule and low yield. Model-based design and machine learning are prospective method to answer the problem. However, reported methods require many simulation numbers (>1000) for training to obtain high accuracy, and it is difficult to optimize parameters considering the process margin at the same time. This article shows a demonstration of zoomed RS method for automatic design of 100 V-class power MOSFETs. Five parameters were automatically designed for not only minimizing on-resistance but also minimizing total power loss, taking into account process margin and switching noise with simulation number of 130 only.

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Section: Introductionmentioning

confidence: 99%

Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method

Saito

2023

Jpn. J. Appl. Phys.

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“…For more R on A reduction to break the Silimit, as a charge compensation structure, the field-plate (FP) structure has been developed as a new innovation to the next step [2]- [4]. Through these technologies, the R on A has been reduced to a factor of 1 for 15 years [5]. Although the application system requires continuing the R on A reduction for more power efficiency improvement, R on A trend is facing the theoretical limit even with the FP technology [6].…”

Section: Introductionmentioning

confidence: 99%

Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET

Saito

Nishizawa

2022

IEEE J. Electron Devices Soc.

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A new parameter optimization method using zoomed response surface (RS) is proposed for automatic design of low-voltage power MOSFET. Low-voltage MOSFET characteristics have been improved continuously considering with not only low power loss but also low cost to answer request to high-performance system. Complicated requirements lead long development schedule and low yield. Model-based design and machine learning are prospective method to answer the problem. However, reported methods require many simulation numbers (> 1000) for training to obtain high accuracy, and it is difficult to optimize parameters considering the process margin at the same time. This article shows a simple design method using zoomed RS. Five parameters were automatically designed, taking account to process margin with simulation number of 130 only.INDEX TERMS Field plate, power MOSFET, on-resistance, automatic design.

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“…20% to decrease CO 2 emissions and the overconsumption of energy resources. With regard to appliances, semiconductor SiC power modules have been proven to drive very efficient high-power devices with several important benefits, including low power loss and high-frequency and high-voltage operations that have been deemed as a key component to accelerate the early social implementation of high-power electronic devices. ,− This technological innovation will drastically change our life also by new practical realizations such as microgrid energy systems and electric aircrafts. − …”

Section: Introductionmentioning

confidence: 99%

Passive Component Enhancements in High-Temperature Electronic Devices: A Deterioration Mechanism for Metal Electrodes in Ceramic Film Resistors

Nakajima

Ito

Nagata

et al. 2020

Ind. Eng. Chem. Res.

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The deterioration mechanisms of chip resistors with both multilayered Au/Ni/Ag electrodes and glass-covered coatings were studied at temperatures above 250 °C, the possible driving temperature of future SiC high-power devices. Based on Joule heating, a heatproof temperature was set to 300 °C, at which the multilayered metal electrodes clearly deteriorated during the 1000 h exposure tests conducted. The main cause of deterioration was likely due to the Au−Ag interdiffusion across micropores and cracks at the Ni layer. This diffusion behavior was strongly dependent on the humidity of the atmosphere. Water molecules that adsorbed into electrode micropores and cracks were found to act as electrolytes, forming micro-Galvanic-like cells that allowed Ag to migrate from the bottom to the surface. The unignorable amount of surface-diffused Ag tended to weaken the electrical paths to the RuO 2 -based resistor, resulting in an increased resistance during these long-term exposure conditions over 750 h. The RuO 2 layer was found to be unaffected by heat below 300−350 °C, where it completely covered the glass. Under an electric bias of 1.5 W, the deterioration process was found to be similar to the simple heating process. Therefore, the deterioration of the chip resistors at high temperature proceeded due to the electrochemical reactions occurring within the multilayered electrodes. This unforeseen deterioration could be suppressed by generating either a thicker Ni interlayer or utilizing a Au absorber, such as Cu, to facilitate diffusion from the top to avoid Au/Ag contact formation.

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Power device trends for high-power density operation of power electronics system

Abstract: Fig. 1 Trends of trade-off characteristics between specific on-resistance (R on A) and breakdown voltage (V B). Fig. 2 Specific on-resistance (R on A) trends of the commercialized (a) 60 V-class and (b) 600 V-class Si power-MOSFETs.

Cited by 18 publications

References 20 publications

Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method

Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method

Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET

Passive Component Enhancements in High-Temperature Electronic Devices: A Deterioration Mechanism for Metal Electrodes in Ceramic Film Resistors

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