Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method

Abstract

As a simple design method, zoomed response surface (RS) method is useful for automatic design of low-voltage power MOSFETs. Low-voltage MOSFET characteristics have been improved continuously considering with not only low power loss but also low cost to answer request to high-performance system. Complicated requirements lead long development schedule and low yield. Model-based design and machine learning are prospective method to answer the problem. However, reported methods require many simulation numbers (>1000) for training to obtain high accuracy, and it is difficult to optimize parameters considering the process margin at the same time. This article shows a demonstration of zoomed RS method for automatic design of 100 V-class power MOSFETs. Five parameters were automatically designed for not only minimizing on-resistance but also minimizing total power loss, taking into account process margin and switching noise with simulation number of 130 only.