Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

Chang, Che‐Cheng; Cheng, Hung-Hsiang; Sevison, Gary A.; Hendrickson, Joshua R.; Li, Zairui; Agha, Imad; Mathews, Jay; Soref, Richard A.; Sun, Greg

doi:10.3390/ma15030989

Cited by 12 publications

(6 citation statements)

References 28 publications

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“…For the fixed bias, the photocurrent on longer wavelength (280 nm) illumination was larger than that on shorter wavelength (265 nm) illumination. This phenomenon can be ascribed to the different numbers of photogenerated carriers under illumination of different wavelengths but with constant incident power. − When the film is illuminated with an incident light of a shorter wavelength of 265 nm, fewer photons reach the films, yielding fewer photocarriers, and, in turn, a smaller photocurrent.…”

Section: Resultsmentioning

confidence: 99%

Metal–Semiconductor–Metal Photodetectors Based on β-MgGaO Thin Films

Yang

Shou

et al. 2023

ACS Appl. Electron. Mater.

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Ultrawide-bandgap (UWBG) deep-ultraviolet photodetectors have received great attention due to their versatile applications in the fields of scientific research, civilian infrastructure, military defense, etc. In this perspective, we fabricated deep-ultraviolet β-MgGaO metal–semiconductor–metal photodetectors with interdigital Pt/Au metal contacts. β-Phase MgGaO ternary alloy thin films of different Mg atomic percentages were grown using oxygen plasma-assisted molecular beam epitaxy. Ultrawide bandgaps of 5.03, 5.09, 5.15, and 5.22 eV were achieved for thin films with and without Mg2+ incorporation, and light transmittances of all samples were around 90% in the visible region. Raman spectra indicate that Mg2+ atoms have replaced the position of Ga3+ ions in both octahedral and tetrahedral chains. The responsivity of the detectors was investigated. The irradiation wavelength-, temperature-, and power-dependent I–V curves, photocurrent spectra, and dynamics of the photocurrents were measured. This work suggests that UWBG β-MgGaO semiconductors have a potential for deep-ultraviolet photodetectors and other photonic device applications.

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Section: Resultsmentioning

confidence: 99%

Metal–Semiconductor–Metal Photodetectors Based on β-MgGaO Thin Films

Yang

Shou

et al. 2023

ACS Appl. Electron. Mater.

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“…This small decrease can be attributed to the charge carriers scattering caused by internal‐photothermal heating and enhanced carrier recombination effects. [ 28 ] Nevertheless, it noteworthy that the PD demonstrates high performance even at the higher power intensities.…”

Section: Resultsmentioning

confidence: 99%

Printed GaAs Microstructures‐Based Flexible High‐Performance Broadband Photodetectors

Zumeit

Dahiya

Christou

et al. 2022

Adv Materials Technologies

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communication, [4] environmental monitoring, [5] and wearable and neuromorphic computing. [6] This will also have an impact on the internet of things (IoT) where smart objects are wirelessly connected to interact with the environment and the human body. [7] The high-performing electronic devices made of compliant materials can add new capabilities in terms of highspeed communications, efficient image sensing, and so on. [4c,8] For example, the transmission rate, the transmission capacity, and the efficiency of wireless communication could significantly be enhanced if a single photodetector (PD) device could operate under wide spectra with low power consumption and latency. Furthermore, the demands for wide spectral switches [9] or memory storage [10] could be satisfied from the single PD. However, the studies so far have primarily focused on the development and characterization of high-performance flexible PDs under certain wavelength (i.e., UV, [1b,10,11] visible, [12] or NIR [13] spectrum). Recently, there have been few attempts to develop ultrafast and conformable broadband PDs. [8b,14] Among these, the heterostructures based on 2D materials and perovskites have shown potential to expand the working wavelength of PDs. [14] This is owing to their direct bandgap and large absorption coefficient. [15] Specifically, perovskites have garnered more interest for optoelectronic applications as they are solution processable and their fabrication cost is low. However, due to low mobility (≈1-10 cm 2 Vs) [16] and poor stability, [17] their performance metrics (e.g., responsivity [R] and specific detectivity [D*])) for PDs are modest. The poor stability in ambient conditions is attributed to the adsorption of water and oxygen molecules which greatly accelerate the degradation of the perovskite photosensitive layer. [15a] Efforts are ongoing to enhance the stability of perovskite-based devices exploring different encapsulations, but low intrinsic mobilities will still be a challenge. Thus, the efforts to develop next generation of flexible and high-performing PDs, with wide spectral sensitivity and robust fabrication route, are still on.In the above context, the nanostructures and thin films of inorganic compound semiconductors such as gallium arsenide (GaAs) have shown considerable potential for optoelectronic Nano/microstructures of compound semiconductors such as gallium arsenide (GaAs) demonstrate enormous potential for advanced photonic technologies as they provide realistic means for miniaturization of optoelectronic devices that feature better performance and low power consumption. However, intimately integrating them onto flexible substrates is challenging and restricts their use in the next generation of applications such as wearables and soft robotics. Herein, printed arrays of well-defined and laterally aligned semi-insulating (undoped) and doped GaAs microstructures are presented to develop high-performance flexible broadband photodetectors. The direct roll transfer printed GaAs microstructures-based ph...

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“…Therefore, the net built-in field becomes weaker under higher incident light powers and fewer photogenerated electron-hole pairs will be separated, leading to a reduction in the responsivity with increasing light power. With adding concentration of the photogenerated carrier in TAPP units at the higher power density, the increase in the photogenerated carrier recombination rate in the photosensitive TAPP units also reduces the responsivity of the device as the light power enhances [58,62].…”

Section: Resultsmentioning

confidence: 99%

A facile covalent strategy for ultrafast negative photoconductance hybrid graphene/porphyrin-based photodetector

Li¹,

Ma²,

Mu³

et al. 2022

Nanotechnology

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As a powerful complement to positive photoconductance (PPC), negative photoconductance (NPC) holds great potential for photodetector. However, the slow response of NPC relative to PPC devices limits their integration. Here, we propose a facile covalent strategy for an ultrafast NPC hybrid 2D photodetector. Our transistor-based graphene/porphyrin model device with a rise time of 0.2 ms and decay time of 0.3 ms has the fastest response time in the so far reported NPC hybrid photodetectors, which is attributed to efficient photogenerated charge transport and transfer. Both the photosensitive porphyrin with an electron-rich and large rigid structure and the built-in graphene frame with high carrier mobility are prone to the photogenerated charge transport. Especially, the intramolecular donor-acceptor system formed by graphene and porphyrin through covalent bonding promotes photoinduced charge transfer. This covalent strategy can be applied to other nanosystems for high-performance NPC hybrid photodetector.

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Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

Cited by 12 publications

References 28 publications

Metal–Semiconductor–Metal Photodetectors Based on β-MgGaO Thin Films

Metal–Semiconductor–Metal Photodetectors Based on β-MgGaO Thin Films

Printed GaAs Microstructures‐Based Flexible High‐Performance Broadband Photodetectors

A facile covalent strategy for ultrafast negative photoconductance hybrid graphene/porphyrin-based photodetector

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