Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots

Bouzaı̈ene, L.; Sfaxi, L.; Baïra, M.; Maâref, H.; Bru‐Chevallier, C.

doi:10.1007/s11051-010-0024-1

Cited by 10 publications

(1 citation statement)

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“…According to the literature, different shapes of QDs, such as elliptical-shaped [11], spherical-shaped [12], cylindrical-shaped [13] and pyramidal-shaped [14] have been investigated over the years to describe the 3D confinement in InAs/ GaAs systems. However, from the Atomic Force Microscopy (AFM) and Electronic Transmission Microscopy (TEM) results, it is found that the lens-shape is the most realistic model of the QD [15,16]. Recently, more attention has been focused on the study of core/shell nanostructures because of their importance in the electric and optical properties.…”

Section: Introductionmentioning

confidence: 99%

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2021

Journal of Nanotechnology and Smart Materials

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In this paper, we have interested in the optimization of the nonlinear optical rectification (NOR) and the intra-band transition lifetime (τ) of carriers in single lens-shaped InAs/GaAs core/shell. The energy levels and the envelope wave functions are calculated by using the Finite Difference Method (FDM) and within the framework of the effective mass-approximation.The obtained results clearly showed that the structure dimensions, the wetting layer (WL), the pressure (P), the temperature (T), the electric (F) and the magnetic (B) fields dramatically affected τ, NOR magnitude and the attributed resonant energy (ω res ). Besides, the resonant energy can be blue or red-shifted energies, depending on the proofs revealed above. Moreover, obtained results showed that the NOR achieved and optimum magnitude when the transverse electric field was applied along one side of the cross-section of the structure under investigation. Also, the opposite effects caused by hydrostatic pressure and temperature reveal a big practical interest and offer an alternative way to tuning of the NOR in optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%