Temperature dependence of optical properties of InAs quantum dots grown on GaAs(113)A and (115)A substrates

Bennour, M.; Bouzaı̈ene, L.; Saidi, F.; Sfaxi, L.; Maâref, H.

doi:10.1007/s11051-011-0557-y

Cited by 9 publications

(4 citation statements)

References 32 publications

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“…We note in this section that the details of numerical analysis of Schrödinger equation without coulomb interaction effects can be found in previously published works [24,25], where the strain is considered constant.…”

Section: Transition Energy and Coulomb Interactionmentioning

confidence: 99%

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Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates

Bennour

Bouzaı̈ene

Saidi

et al. 2015

Journal of Alloys and Compounds

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Section: Transition Energy and Coulomb Interactionmentioning

confidence: 99%

“…This has led researchers to growing the InGaAs / GaAs (111) QDs by other techniques such as the droplet epitaxy technique and atomic layer epitaxy [1,29]. However, the formation of QDs on GaAs (113) substrate is not very difficult and it is now to be optimized [25,30,31].…”

Section: A Effect Of the Substrate Orientation On The Strain Distribmentioning

confidence: 99%

Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates

Bennour

Bouzaı̈ene

Saidi

et al. 2015

Journal of Alloys and Compounds

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“…Moreover, an optical characteristics of such photonic material is useful for band gap investigation [3]. As far as a literature review of the photonic structure is concerned, a good number of research papers are previously published on semiconductor waveguides [4]. Aside this, a few number of articles are found for sensing applications by photonic waveguide structure [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Realisation of Pressure Sensor using one Dimensional Indium Arsenide (InAs) Based Photonic Waveguide in 3 Communication Windows

Mishra¹,

Nayak

Arunachalam³

et al. 2021

Preprint

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Indium arsenide (InAs) based one dimensional photonic crystal waveguide is cautiously considered in three optical communication windows. Here, the emerging transmitted signal from one dimensional photonic structure is determined with the consideration of five types of losses (diffraction loss, reflection loss, absorption loss, propagation loss, polarisation loss). Further, the transmitted signal is obtained with respect to pressure, which ranges from 0 GPa to 5 GPa for different lattice constant of photonic structure (100 nm, 120 nm, 140 nm). Simulation upshots revealed that indium arsenide semiconductor based photonic waveguide shows an excellent outcome for pressure sensor in the three optical windows as well as different waveguide lengths.

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“…19 This is an advantage likely to be transformable to low threshold QD laser diodes using high index substrates. Meanwhile, there have been a lot of studies focused on the B termination, and few authors have reported on InAs grown on GaAs(11N)A termination, 14,20,21 although the substrate termination depends mainly by the piezoelectric fields 22 and the chemical potential. 23 On the other hand, and contrary to what has been reported in Refs.…”

mentioning

confidence: 99%

Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate

Bennour

Saidi

Bouzaı̈ene

et al. 2012

Journal of Applied Physics

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We present a study of the optical properties of InAs self-assembled nanostructures grown by molecular beam epitaxy on GaAs(11N)A substrates (N ¼ 3-5). Photoluminescence (PL) measurements revealed good optical properties of InAs quantum dots (QDs) grown on GaAs(115)A compared to those grown on GaAs(113)A and (114)A orientations substrate. An additional peak localized at 1.39 eV has been shown on PL spectra of both GaAs(114)A and (113)A samples. This peak persists even at lower power density. Supporting on the polarized photoluminescence characterization, we have attributed this additional peak to the quantum strings (QSTs) emission. A theoretical study based on the resolution of the three dimensional Schrödinger equation, using the finite element method, including strain and piezoelectric-field effect was adopted to distinguish the observed photoluminescence emission peaks. The mechanism of QDs and QSTs formation on such a high index GaAs substrates was explained in terms of piezoelectric driven atoms and the equilibrium surfaces at edges.

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Temperature dependence of optical properties of InAs quantum dots grown on GaAs(113)A and (115)A substrates

Cited by 9 publications

References 32 publications

Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates

Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates

Realisation of Pressure Sensor using one Dimensional Indium Arsenide (InAs) Based Photonic Waveguide in 3 Communication Windows

Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate

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