2022
DOI: 10.1016/j.compeleceng.2022.107828
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Power and delay analysis of dielectric modulated dual cavity Junctionless double gate field effect transistor based label-free biosensor

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Cited by 14 publications
(5 citation statements)
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“…The increasing K bio of biomolecules decreases both the on-current and off-current [89], but the relative change increases due to increased gate-to-channel coupling. Hence, S ION [90] and S IOFF increase with the increasing K bio . Figure 7(b) shows the I ON /I OFF ratio, while the inset shows the fractional sensitivity in I ON /I OFF ratio (S FCR ) [91].…”
Section: Resultsmentioning
confidence: 87%
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“…The increasing K bio of biomolecules decreases both the on-current and off-current [89], but the relative change increases due to increased gate-to-channel coupling. Hence, S ION [90] and S IOFF increase with the increasing K bio . Figure 7(b) shows the I ON /I OFF ratio, while the inset shows the fractional sensitivity in I ON /I OFF ratio (S FCR ) [91].…”
Section: Resultsmentioning
confidence: 87%
“…Subthreshold swing varies inversely with the gate oxide capacitance, and as a result, subthreshold swing decreases. However, the relative change (with respect to the 'unfilled cavity case') increases with the increasing K bio [90], which is visible in figure 8(b). Threshold voltage has shown a more significant variation than the subthreshold swing for the same biomolecules and hence is a better sensing metric.…”
Section: Resultsmentioning
confidence: 88%
“…For the proposed structure, the gate capacitance primarily determines the effective capacitance. 38 In this section, the cavity is considered fully filled, so the thickness of the cavity must be equal to the thickness of the biomolecule. In the simulation process, we took into account the presence of charged biomolecules by introducing the concept of interface trap charges at Si-SiO 2 interfaces.…”
Section: Resultsmentioning
confidence: 99%
“…The alteration in the N f leads to adjustments in the flatband voltage (V fb ), consequently causing shifts in the threshold voltage (V Th n , ). 38 The threshold voltage is denoted as V Th n…”
Section: Resultsmentioning
confidence: 99%
“…The findings exhibited the need for a high k dielectric layer with larger conduction band offset (CBO) or a high band gap semiconductor layer for reducing leakage and minimizing power consumption. Jana et al formulated the current sensitivity, delay and power consumption in a dual cavity junction less double gate MOSFET-based biosensor and also investigated the impact of charged biomolecules on the aforesaid parameters [ 106 ].…”
Section: Challenges In Current Leakage Power Dissipation and Proposed...mentioning
confidence: 99%