Power amplifier PAE and ruggedness optimization by second-harmonic control

Spirito, M.; Vreede, L.C.N. de; Nanver, L.K.; Weber, SN; Burghartz, Joachim N.

doi:10.1109/jssc.2003.815918

Cited by 11 publications

(3 citation statements)

References 12 publications

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“…Typically, HTN circuits are used to suppress second and third harmonics of PA to increase output power, PAE, and ruggedness. [18][19][20]. Nikandish et al proposed an HTN technique to suppress the even harmonics in class F PA [21].…”

Section: Harmonic Termination Networkmentioning

confidence: 99%

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Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Hayat¹,

Zafar

Mehmood³

et al. 2021

IET Circuits, Devices & Syst

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This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)based cascaded multistage power amplifier (MPA) in class-AB for L-band radar applications. The purpose of this endeavour is to develop an MPA using GaN HEMT devices to achieve optimised parameters such as high gain, high power, better efficiency, and linearity in a compact size. In an MPA design with multiple stages, oscillations are common owing to unwanted high gain at the lower frequency range. To overcome this issue, we introduced interstage harmonic termination networks as a novel approach to suppress high gain at low frequencies, which are prone to oscillations. The proposed cascaded MPA provides the maximum radio-frequency output power of 89 W and a power gain of 52 dB with an associated power-added efficiency of 51%. Second and third harmonic levels are −32.5 and −37 dBc, respectively. Two-tone measurements are performed with a frequency separation of 10 MHz, and an intermodulation level of less than −33 dBc is achieved. | INTRODUCTIONPower amplifiers (PAs) are widely used in wireless communication and radar applications. Microwave frequencies (UHF, Lband, S-band etc.) have a dominant role in commercial and defence applications. Modern communication standards such as GSM, CDMA, W-CDMA, and WiMAX with digital modulation schemes, such as QAM, QPSK, DQPSK, OFDM, are characterised by varying signal envelopes with a high peak-toaverage power ratio [1,2]. To fulfil the requirements of communication standards, PA design includes the frequency of operation, output power, bandwidth, efficiency, gain, linearity, and cost. However, it is challenging to achieve optimum values of all parameters simultaneously [3,4]. Therefore, trade-offs must be made, and a subset of the desired parameters can be satisfied depending on the specific needs of the application. Some traditional trade-offs are gain versus bandwidth, operating frequency versus output power, and linearity versus efficiency [4]. In wireless communication, PA has the main role of amplifying the desired modulated signal before transmission [5]. Thus, multistage PAs (MPAs) are designed to accomplish the need for a link with high gain and high output power. In MPA design, a critical concern is the possibility of oscillations caused by instabilities including very high gain, positive feedback, resonant tanks, poor isolation between DC and radiofrequency (RF) paths, and parametric oscillations of nonlinear capacitances. These instabilities are particularly worse at lower frequencies owing to high gain, and detection to avoid such oscillations is always tedious [5,6].Gallium nitride (GaN), a wideband gap semiconductor, has emerged as a potential candidate to fulfil the requirements of current and future communication systems [7,8]. GaN high electron mobility transistor (HEMT)-based PAs provide a better trade-off with high output power with a compact size, owing to their high output power densities, compared with travelling wave tube amplifiers [9]. Gurdal et al. demonstrated GaN-based...

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Section: Harmonic Termination Networkmentioning

confidence: 99%

“…Typically, HTN circuits are used to suppress second and third harmonics of PA to increase output power, PAE, and ruggedness. [18–20]. Nikandish et al.…”

Section: Design Aspect Of Cascaded Multistage Power Amplifiermentioning

confidence: 99%

Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Hayat¹,

Zafar

Mehmood³

et al. 2021

IET Circuits, Devices & Syst

View full text Add to dashboard Cite

show abstract

“…The main nonlinearity of CMOS PAs caused by the input capacitance variation can be improved by a second harmonic control [24] or the capacitor compensation technique [25]. Although the second harmonic short circuits at the output are commonly employed to improve the linearity [18], [20], [24], [25] and efficiency [26] of CMOS PAs, the importance of the input second harmonic control on the linearity has been overlooked.…”

Section: Introductionmentioning

confidence: 99%

Envelope-Tracking CMOS Power Amplifier Module for LTE Applications

Kang

Park

Kim

et al. 2013

IEEE Trans. Microwave Theory Techn.

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An envelope-tracking (ET) CMOS power amplifier (PA) is fabricated using a 0.18-m CMOS process. The module containing the supply modulator, the PA, and the output transformer is implemented on a printed circuit board (PCB). The CMOS PA employs the second and third harmonic controls at the input and the second harmonic short at the output for improved linearity. The impact on the nonlinearity of the cascode differential structure is studied and optimized. A proposed output transformer on the PCB minimizes the loss and enhances the efficiency of the PA. The ET on the gate of the common gate transistor is proposed to achieve high linearity and efficiency without using a digital pre-distortion technique. For a long-term evolution (LTE) signal at 1.85 GHz with a 10-MHz bandwidth and a 16QAM 7.5-dB peak-to-average power ratio, the ET CMOS PA module achieves a power-added efficiency of 34%, an error vector magnitude of 2.8%, and an adjacent channel leakage ratio of 34.2 dBc at an average output power of 26 dBm. The ET operation reduces the total current consumption by 10% to 34%, according to the power level, over that of the standalone PA for the LTE signal.Index Terms-CMOS, efficient, envelope tracking (ET), linear, handset, power amplifier (PA), long-term evolution (LTE).

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High‐Efficiency Amplifier Techniques

Bahl

2008

Fundamentals of RF and Microwave Transistor Amplifiers

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Power amplifier PAE and ruggedness optimization by second-harmonic control

Cited by 11 publications

References 12 publications

Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Envelope-Tracking CMOS Power Amplifier Module for LTE Applications

High‐Efficiency Amplifier Techniques

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