Power-amplifier modules covering 70-113 GHz using MMICs

Wang, Huei; Samoska, Lorene; Gaier, T.; Peralta, Alejandro; Liao, Hsin-Hsing; Leong, Yoke Choy; Weinreb, S.; Chen, Y.C.; Nishimoto, M.; Lai, R.

doi:10.1109/22.899956

Cited by 59 publications

(4 citation statements)

References 10 publications

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“…This amplification is achieved with custom designed balanced power amplifiers (PAs). Every PA consist of three WR-11 gain modules, each of which houses a medium power monolithic microwave integrated circuit (MMIC) [32] originally developed for HIFI [33], the high resolution instrument on Herschel [34].…”

Section: B 63-105 Ghz Waveguide Power Amplifiersmentioning

confidence: 99%

“…For the HIFI gain modules, WR-10 and WR-8 waveguide were employed with TE mode frequency limits of approximately 70 and 88 GHz. Inspection of on-wafer S-parameter measurements reveals [32] that the CPW-MMIC driver chips are capable of an extended frequency range, albeit with slightly reduced performance. To accommodate the CSO Fig.…”

Section: B 63-105 Ghz Waveguide Power Amplifiersmentioning

confidence: 99%

See 1 more Smart Citation

Balanced Receiver Technology Development for the Caltech Submillimeter Observatory

Kooi

Chamberlin

Monje

et al. 2012

IEEE Trans. Terahertz Sci. Technol.

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Section: B 63-105 Ghz Waveguide Power Amplifiersmentioning

confidence: 99%

Section: B 63-105 Ghz Waveguide Power Amplifiersmentioning

confidence: 99%

Balanced Receiver Technology Development for the Caltech Submillimeter Observatory

Kooi

Chamberlin

Monje

et al. 2012

IEEE Trans. Terahertz Sci. Technol.

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show abstract

“…Constrained by the output power capability of monolithic microwave circuit (MMIC) [1][2][3][4][5][6][7][8][9][10][11][12][13], several methods of power combiner technique, such as magic T, radial-line etc., have been developed for SSPA operating in the W-band [14][15][16][17][18][19][20]. Galliumnitride high-electron-mobility-transistor (GaN HEMT) MMICs used as the PA's last stage of is mainly addressed in the recent literatures [21][22][23].…”

Section: Introductionmentioning

confidence: 99%

W band solid‐state power amplifier for aerospace usage

Yang

Zhang

et al. 2021

The Journal of Engineering

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Concentrating on the high frequency aerospace demand of solid-state power amplifier (SSPA), this paper presents the methodology and key technique of a W-band 3-W SSPA that achieves high efficiency while maintaining excellent reliability capability. An improved Magic-T power combiner is utilized to achieve high output power, and eliminate the influence of the parallel end-stage gallium-nitride high-electron-mobility-transistor (GaN HEMT) PAs by its good isolation performance. The SSPA's millimetre-wave circuit is implemented by three stages of amplifier, to realized more than 30-dB power gain. The power-supply circuit based on the two-transistor forward topology is proposed for voltage converting and output serious sequence controlling. The SSPA is fabricated and measured, achieving 33-dBm to 34.1-dBm output power within the frequency range of 92-96 GHz, with the power gain of 31-32 dB, and peak efficiency of 7.1%, respectively. The proposed SSPA shows competitive performance for space application.

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“…Development of the pseudomorphic high electron mobility transistor (pHEMT) has revolutionized monolithic microwave integrated circuits (MMICs) which can operate at very high frequencies even beyond 100 GHz [1][2][3]. Many applications such as transmitters, receivers, etc require power amplifiers and SPDT switches [4].…”

Section: Introductionmentioning

confidence: 99%

Gate recess structure engineering using silicon-nitride-assisted process for increased breakdown voltage in pseudomorphic HEMTs

Bhat¹,

Mandal²,

Pathak³

et al. 2012

Semicond. Sci. Technol.

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We report the fabrication of pseudomorphic high electron mobility transistors (pHEMTs) with engineered recess structure of any width of choice, by a single lithography and etching step with the help of silicon-nitride-assisted process. In this process, a silicon nitride layer is deposited prior to gate lithography. First, the silicon nitride is etched by buffered hydrofluoric acid (BHF) in the gate opening and then selective recessing is performed. The recess base width can be engineered by varying etch time of silicon nitride in BHF. The base width increases linearly with etch time as shown by SEM. We demonstrate that the top photoresist gate opening that decides the gate length is unaffected by any duration of silicon nitride etch time. Thereby, we have engineered the distance from gate edge to n + -GaAs (L gn+ ) which decides the gate-to-drain breakdown voltage (BV gd ). With this method, BV gd increased from 12 to 20 V as a function of L gn+ . The electric field distribution across the recess structure has been simulated to interpret this result. Since the high BV gd of pHEMT is essential for power applications as well as switch applications, this method can be easily adopted even though the corresponding reduction in transconductance and unit current gain cut-off frequency (f t ) is only marginal from 375 to 350 mS mm −1 and from 39 to 31 GHz, respectively.

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Power-amplifier modules covering 70-113 GHz using MMICs

Cited by 59 publications

References 10 publications

Balanced Receiver Technology Development for the Caltech Submillimeter Observatory

Balanced Receiver Technology Development for the Caltech Submillimeter Observatory

W band solid‐state power amplifier for aerospace usage

Gate recess structure engineering using silicon-nitride-assisted process for increased breakdown voltage in pseudomorphic HEMTs

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