Power amplification with silicon carbide MESFET

Broch, J. F.; Temçamani, Farid; Pouvil, P.; Noblanc, O.; Prigent, J.P.

doi:10.1002/(sici)1098-2760(19991005)23:1<16::aid-mop5>3.0.co;2-f

Cited by 8 publications

(5 citation statements)

References 1 publication

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“…Owing to superior material features, a silicon carbide (SiC) based metal-semiconductor field effect transistor (MESFET) is considered to be one of the promising devices for the next-generation high power, high frequency, high efficiency, compact radio frequency and microwave (RF&MW) electric circuit applications even under an extremely worse environment [1][2][3]. Compared to those using conventional technologies based on Si and GaAs, SiC MESFETs can provide higher RF power density, broader bandwidth, smaller system size and weight, less complex amplifier arrangement, etc [4,5]. Though SiC MESFETs have better RF power performance, it is still worth investigating potential ways to improve them to better meet the increasing demand for high frequency and high power applications.…”

Section: Introductionmentioning

confidence: 99%

Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region

Zhang¹,

Zhang²,

2009

Semicond. Sci. Technol.

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An improved asymmetric 3D tri-gate 4H-SiC metal-semiconductor field effect transistor with a recessed drain drift region was proposed in order to improve the power and frequency performance of the device. The dc and RF electrical characteristics of the proposed structure were studied in detail by numerical simulation. The simulated results showed that the maximum theoretical output power density of the proposed structure is about 36% larger than that of the published symmetric 3D tri-gate structure due to significant improvement of saturation drain current and breakdown voltage. The cut-off frequency (f T ) and the maximum oscillation frequency (f max ) of the proposed structure are 20.6 GHz and 82.4 GHz compared to 16.1 GHz and 55.9 GHz of those of the published 3D tri-gate structure, respectively.

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Section: Introductionmentioning

confidence: 99%

Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region

Zhang¹,

Zhang²,

2009

Semicond. Sci. Technol.

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“…These qualities have been applied in the development of different generations of power amplifiers for use in digital audio and video broadcasting [1], [2], aerospace and military systems [3], [4] and also in UHF broadband amplifiers [5], [6]. These qualities have been applied in the development of different generations of power amplifiers for use in digital audio and video broadcasting [1], [2], aerospace and military systems [3], [4] and also in UHF broadband amplifiers [5], [6].…”

Section: Introductionmentioning

confidence: 99%

Performance of SiC Microwave Transistors in Power Amplifiers

Azam¹,

Jönsson

Janzén³

et al. 2008

MRS Proc.

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The performance of SiC microwave power transistors is studied in fabricated class-AB power amplifiers and in physical simulations of class-C switching power amplifier using the physical structure of an enhanced version of previously fabricated and tested SiC MESFET. The results for pulse input in class-C at 1 GHz are; efficiency of 71.4 %, power density of 1.0 W/mm. The switching loss was 0.424 W/mm. The results for two class-AB power amplifiers are; the 30-100 MHz amplifier showed 45.6 dBm (~ 36 W) output powers at P 1dB , at 50 MHz. The power added efficiency (PAE) is 48 % together with 21 dB of power gain. The maximum output power at P 1dB at 60 V drain bias and Vg= -8.5 V was 46.7 dBm (~47 W). The typical results obtained in 200-500 MHz amplifier are; at 60 V drain bias the P 1dB is 43.85 dBm (24 W) except at 300 MHz where only 41.8 dBm was obtained. The maximum out put power was 44.15 dBm (26 W) at 500 MHz corresponding to a power density of 4.3 W/mm. The PAE @ P 1dB [%] at 500 MHz is 66 %.

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“…Therefore, widebandgap devices that provide high breakdown voltage, high electron saturation velocity, and high temperature robustness have been recently developed to supply high power and high efficiency power amplifiers at the high frequency region over 2 GHz. Among wide-bandgap devices, the silicon carbide metal semiconductor field effect transistor (SiC MESFET) has been utilized for various power amplifiers [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

A high‐efficiency class‐E power amplifier using SiC MESFET

Lee¹,

Jeong²

2007

Micro & Optical Tech Letters

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This article reports a high efficiency class-E power amplifier using a SiC MESFET, which is designed and tested at 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. From measured results for a single tone, the harmonic power levels are maintained below Ϫ58 dBc at a whole output power level. The peak power-added efficiency of 72.3% with a power gain of 10.27 dB is achieved at an output power of 40.27 dBm. ABSTRACT: It can be shown that a hyperbolic frequency-modulated waveform is Doppler-invariant only when the Doppler factor is a constant number, i.e., the target has a constant velocity and along the direction from the radar to the target. If the target moves in an arbitrary direction, the degradation of the pulse compression caused by the mismatch between the reflected signal and the matched filter may still exist.In this paper, we demonstrate that the Doppler effect caused by the moving target in an arbitrary direction can be approximated by a target with an initial velocity and a constant acceleration along the direction from the radar to the target, which results in a frequency shift in the reflected waveform. Therefore, a bank of matched filters with preselected values of frequency shifts can be utilized to compensate for the Doppler effect. Numerical examples, with target moving in an arbitrary direction, are presented to illustrate this effect, which has been successfully compensated by shifting the frequency response of the matched filter.

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Power amplification with silicon carbide MESFET

Cited by 8 publications

References 1 publication

Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region

Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region

Performance of SiC Microwave Transistors in Power Amplifiers

A high‐efficiency class‐E power amplifier using SiC MESFET

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