Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region

Abstract

An improved asymmetric 3D tri-gate 4H-SiC metal-semiconductor field effect transistor with a recessed drain drift region was proposed in order to improve the power and frequency performance of the device. The dc and RF electrical characteristics of the proposed structure were studied in detail by numerical simulation. The simulated results showed that the maximum theoretical output power density of the proposed structure is about 36% larger than that of the published symmetric 3D tri-gate structure due to significant improvement of saturation drain current and breakdown voltage. The cut-off frequency (f T ) and the maximum oscillation frequency (f max ) of the proposed structure are 20.6 GHz and 82.4 GHz compared to 16.1 GHz and 55.9 GHz of those of the published 3D tri-gate structure, respectively.

A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode

“…To simplify the simulation, the cell marked within the red dash line for the two structures are simulated. Similar to our previous work in [3], [6], [21], [30] and [36], Fermi-Dirac statistics is used in the simulation and models, such as band gap narrowing (BGN), incomplete ionization, FLDMOB, CONWELL, SURFMOB, CONSRH, Auger and analytic models are considered. 4H-SiC material is used and the main device parameters used in the simulation are listed in the Table 1.…”