Potential-Induced Degradation (PID): Introduction of a Novel Test Approach and Explanation of Increased Depletion Region Recombination

Lausch, Dominik; Naumann, Volker; Breitenstein, O.; Bauer, Jan; Graff, Andreas; Bagdahn, J.; Hagendorf, Christian

doi:10.1109/jphotov.2014.2300238

Cited by 117 publications

(88 citation statements)

References 9 publications

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“…The PID degradation was conducted using the PID tester PIDcon by Freiberg instruments at +600 V and 80 °C [6]. The consecutive recovery was done either as an electrical recovery process by -600 V and 80 °C by means of the PIDcon tester or as an thermal recovery at a temperature of 250 °C.…”

Section: Methodsmentioning

confidence: 99%

“…In Figure 1(a) the parallel resistance RP in dependence on the test period of a solar cell under a foil and glass stack is shown. The degradation was performed in the PIDcon tester as described in [6]. The electrical recovery was achieved by a reverse voltage treatment of 600 V (opposite polarity with respect to the one causing PID) at 80 °C.…”

Section: The Recovery Processmentioning

confidence: 99%

“…According to recent publications, the PID shunting effect (PID-s), which decreases strongly the parallel resistance RP of the modules, is the most relevant type of PID [4,5]. However, it has also been shown that PID-s can influence the recombination behavior of the solar-cell [4,6].…”

Section: Introductionmentioning

confidence: 99%

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Sodium Outdiffusion from Stacking Faults as Root Cause for the Recovery Process of Potential-induced Degradation (PID)

et al. 2014

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Section: Methodsmentioning

confidence: 99%

Section: The Recovery Processmentioning

confidence: 99%

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Sodium Outdiffusion from Stacking Faults as Root Cause for the Recovery Process of Potential-induced Degradation (PID)

et al. 2014

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“…누설 전류에 의 하여 Na 이온이 태양전지 표면까지 이동하게 되는 상 황을 예상할 수 있고 이 관점에서 Na 이온의 PID 영향 성에 대한 연구가 진행되고 있다. [13][14][15][16][17][18][19] J. Bauer, V. Naumann 등은 모듈에 전압을 인가한 후 Time-of-flight Secondary ion mass spectroscopy(ToF-SIMS)를 이용하여 PID 이후 Na 이온에 의해 에미터 특 성이 변할 수 있음을 제안하였다. ( Fig.…”

Section: )unclassified

“…테스 트 동안 누설전류를 측정하고, PID가 일어나는 셀을 이 용하여 충진재와 유리 비교 실험을 간편하게 시행이 가 능하다. [17][18][19]26) 3. PID 해결 방안 PID에 의한 모듈 출력 감소를 막기 위하여 다양한 방 법이 제시되었다.…”

Section: )unclassified

Potential Induced Degradation(PID) of Crystalline Silicon Solar Modules

Bae¹,

Oh²,

Kim³

et al. 2014

Korean. J. Mater. Res.

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The use of solar energy generation is steadily increasing, and photovoltaic modules are connected in series to generate higher voltage and power. However, solar panels are exposed to high-voltage stress (up to several hundreds of volts) between grounded module frames and the solar cells. Frequent high-voltage stress causes a power-drop in the modules, and this kind of degradation is called potential induced degradation (PID). Due to PID, a significant loss of power and performance has been reported in recent years. Many groups have suggested how to prevent or reduce PID, and have tried to determine the origin and mechanism of PID. Even so, the mechanism of PID is still unclear. This paper is focused on understanding the PID of crystalline-silicon solar cells and modules. A background for PID, as well as overviews of research on factors accelerating PID, mechanisms involving sodium ions, PID test methods, and possible solutions to the problem of PID, are covered in this paper.

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Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

Yamaguchi

Masuda

Marumoto

et al. 2022

Adv Energy and Sustain Res

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Potential‐induced degradation (PID) has been identified as a central reliability issue of photovoltaic (PV) cell modules. Several types of PID depend on the cell structure. Among those types, polarization‐type PID, which is characterized by reductions in short‐circuit current density (JSC) and open‐circuit voltage (VOC), is the fastest PID mode. Additionally, polarization‐type PID occurs readily at room temperature or at markedly low magnitudes of electric potential difference. Therefore, polarization‐type PID is a severe difficulty affecting silicon PV modules. Recently, degradation behavior, preventive measures, and mechanism have been investigated. As described herein, mechanistic aspects of polarization‐type PID are specifically examined and details of a recently proposed model involving a charge accumulation process at K centers in SiNx dielectric layers: the K‐center model are discussed. The K‐center model consistently explains previously reported results of experimentation, which indicates the validity of this model. Discussions presented herein are expected to improve the mechanistic understanding of polarization‐type PID in the PV community and to stimulate further discussions and verifications of the model.

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Potential-Induced Degradation (PID): Introduction of a Novel Test Approach and Explanation of Increased Depletion Region Recombination

Cited by 117 publications

References 9 publications

Sodium Outdiffusion from Stacking Faults as Root Cause for the Recovery Process of Potential-induced Degradation (PID)

Sodium Outdiffusion from Stacking Faults as Root Cause for the Recovery Process of Potential-induced Degradation (PID)

Potential Induced Degradation(PID) of Crystalline Silicon Solar Modules

Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

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