Potential application of multilayer n-type tungsten diselenide (WSe 2 ) sheet as transparent conducting electrode in silicon heterojunction solar cell

Tiwari, Pranjala; Patel, Kamlesh; Krishnia, Lucky; Kumari, Reetu; Tyagi, Pawan

doi:10.1016/j.commatsci.2017.04.026

Cited by 15 publications

(13 citation statements)

References 28 publications

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“…Tungsten diselenide (WSe 2 ) is one of the TMD materials with a band gap in the range of ∼1.2 (indirect band gap in a multilayer) to ∼1.8 eV (direct band gap in a monolayer), which among other TMDs such as MoS 2 , WS 2 , and MoSe 2 has not been investigated much. WSe 2 flakes have essential properties like high mobility of carriers (250 cm 2 /V s), excellent light–matter interactions, significant luminescence intensity, high photoconversion efficiency, and polarity control that make them a promising candidate among TMD materials for electronic and optoelectronic functions. Despite all of these enticing aspects, a few-layer sample of the WSe 2 -based photodetectors suffers from some negative features, including low absorption of light (0.02% in maximum value), an absence of essential charge carriers (∼10 12 cm –2 ), and a narrow detection range in wavelength along with a slow photoresponse.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

Ghods

Vardast

Esfandiar

et al. 2022

ACS Appl. Electron. Mater.

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High-performance photodetectors play critical roles in numerous photon-based applications in imaging, communication, and energy harvesting. Nowadays, heterostructures have received significant attention to extend the performance of photodetectors, with exceptionally high optical absorption and a wide absorption range. However, the enhancement factors, exact mechanism, and facile fabrication procedures are long-standing problems. Here, a heterojunction of a two-dimensional chemical vapor deposition-grown monolayer of WSe 2 with a Cu 2 ZnSnS 4 (CZTS) film is introduced. The CZTS film as an abundant material was synthesized in the form of nanoparticles, and it showed a great effect on the enhancement of light absorption. By control of the gate voltage, the results of optoelectronic measurements reveal fast response (2.5 ms) and broadband photoresponsivity (∼550 A/W for 395−980 nm), which are about 2500 times higher than those of a conventional WSe 2 structure. The energy band structure at the interface of the heterojunction and simulated data with/without a gate voltage were used to investigate the device operation mechanism. It has been realized that the gate voltage has direct impacts on increasing the photocurrent and suppressing the recombination of the photocarriers. The observed experimental results and the proposed mechanism pave shortcuts to developing efficient photodetectors based on transition metal dichalcogenides and earth-abundant materials.

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Section: Introductionmentioning

confidence: 99%

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

Ghods

Vardast

Esfandiar

et al. 2022

ACS Appl. Electron. Mater.

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“…Several dopant‐free CSCs layers have been used in c‐Si solar cells such as metal oxides, metal fluorides, or metal nitrites 14,16 . In general, the band gap and work function of dopant‐free CSCs induce a band alignment with the adjacent Si and metal contacts in such a way that these layers allow one type of photogenerated charge carriers to be transported while blocking the other 14,16–23 …”

Section: Introductionmentioning

confidence: 99%

On the application of hole‐selective MoO_x as full‐area rear contact for industrial scale p‐type c‐Si solar cells

Nasser

Borra

et al. 2020

Progress in Photovoltaics

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We present the feasibility of integrating substoichiometric molybdenum oxide (MoOx) as hole‐selective rear contact into the production sequence of industrial scale p‐type crystalline silicon (c‐Si) solar cells. Thin films of MoOx are deposited directly on p‐type c‐Si by thermal evaporation at room temperature. It is found that Ag/MoOx/p‐type c‐Si rear contact structure exhibits low contact resistivity and modest surface recombination current density. The attained peak efficiency (η) of the fabricated solar cells is 17.65% with Voc of 626 mV, Jsc of 36.8 mA/cm2, and fill factor (FF) of 76.63%. Next, a complete loss analysis of a MoOx/p‐type Si heterojunction solar cell is carried out for the first time by using Quokka simulation software that employs characteristics of different layers which constitute the fabricated solar cell. Based on this loss analysis, the dominant loss mechanisms are defined and a roadmap to attain the desired highest possible efficiency from industrial scale p‐type c‐Si solar cells with full‐area MoOx hole‐collecting rear contact is explored.

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“…We have considered WSe 2 as the BSF layer. In thin film solar cells and photo electrochemical cells (PECs), there is enormous potential of WSe 2 [29][30][31][32]. It has high carrier mobility and also non-toxic earthabundant materials.…”

Section: Introductionmentioning

confidence: 99%

Computational investigation towards highly efficient Sb₂Se₃ based solar cell with a thin WSe₂ BSF layer

Ebon,

Ali,

Haque

et al. 2023

Eng. Res. Express

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A novel structure of chalcogenide-based antimony selenide (Sb2Se3) which is the most promising absorber materials in the field of thin film solar cells with a tungsten diselenide (WSe2) back surface field (BSF) has been proposed in this paper. Antimony selenide (Sb2Se3) with a BSF has been observed by one-dimensional solar cell capacitance simulator (SCAPS-1D). Its recognizable properties make it one of the most usable for non-toxic solar cell absorbers. This paper demonstrated the planning and modeling of Al/FTO/n-TiO2/p-Sb2Se3/Ni (without BSF) and Al/FTO/n-TiO2/p-Sb2Se3/p+-WSe2/Ni (with BSF) structures. The capability of Al/FTO/n-TiO2/p-Sb2Se3/p+-WSe2/Ni heterojunction solar cell structure shows the promising performances. We have numerically simulated and observed the performance parameters such as power conversion efficiency (PCE), open circuit voltage (VOC), short circuit current density (JSC) and fill factor (FF) by tuning the different parameters such as thickness, doping concentration, defect density, the interface defect density, surface recombination velocity, series and shunt resistances along with temperature. The PCE of 20.61% with an absorber’s thickness of 800 nm for without BSF has been achieved. By inserting the WSe2 BSF with thickness of 100 nm, highly improving efficiency of 32.35% has been demonstrated. Our simulation and numerical analysis also provide valuable and important information that is very effective for further implementation and achieving high efficiency of thin film solar cell.

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Potential application of multilayer n-type tungsten diselenide (WSe 2 ) sheet as transparent conducting electrode in silicon heterojunction solar cell

Cited by 15 publications

References 28 publications

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

On the application of hole‐selective MoO_x as full‐area rear contact for industrial scale p‐type c‐Si solar cells

Computational investigation towards highly efficient Sb₂Se₃ based solar cell with a thin WSe₂ BSF layer

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Potential application of multilayer n-type tungsten diselenide (WSe 2 ) sheet as transparent conducting electrode in silicon heterojunction solar cell

Cited by 15 publications

References 28 publications

Enhanced Broadband Photoresponsivity of the CZTS/WSe2 Heterojunction by Gate Voltage

Enhanced Broadband Photoresponsivity of the CZTS/WSe2 Heterojunction by Gate Voltage

On the application of hole‐selective MoOx as full‐area rear contact for industrial scale p‐type c‐Si solar cells

Computational investigation towards highly efficient Sb2Se3 based solar cell with a thin WSe2 BSF layer

Contact Info

Product

Resources

About

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

Enhanced Broadband Photoresponsivity of the CZTS/WSe₂ Heterojunction by Gate Voltage

On the application of hole‐selective MoO_x as full‐area rear contact for industrial scale p‐type c‐Si solar cells

Computational investigation towards highly efficient Sb₂Se₃ based solar cell with a thin WSe₂ BSF layer