Potassium sorbate as an inhibitor in copper chemical mechanical planarization slurries. Part II: Effects of sorbate on chemical mechanical planarization performance

Nagar, Magi; Vaes, Jan; Ein‐Eli, Yair

doi:10.1016/j.electacta.2009.10.086

Cited by 18 publications

(3 citation statements)

References 22 publications

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“…2(d) ), which are much lower than those reported in previous studies. 27 Compared with the surface roughness of lapping, the roughness of polishing is improved by 2 orders of magnitude. As far as we know, the surface roughness Sa values of the polishing surface in this study are the lowest values reported to date.…”

Section: Resultsmentioning

confidence: 99%

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing

et al. 2022

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Section: Resultsmentioning

confidence: 99%

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing

et al. 2022

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“…the inhibitory effect of potassium sorbate on the biodegradable AZ91E magnesium alloy in a gastric corrosive environment has been investigated [80]. Ein-Eli et al investigated CMP slurry of Cu containing potassium sorbate as an inhibitor, H 2 O 2 as an oxidant and glycine as a complexing agent [34,35]. Electrochemical studies show that due to the formation of oxide and sorbate protective film on the copper surface, adding potassium sorbate to the H 2 O 2 -glycinebased slurries can increase the passivity, thereby enlarging the passivation area.…”

Section: 12mentioning

confidence: 99%

A review: green chemical mechanical polishing for metals and brittle wafers

Liu¹,

Zhang²,

Wu³

et al. 2021

J. Phys. D: Appl. Phys.

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Chemical mechanical polishing (CMP) is the most effective technique to obtain global and local planarization of metal and brittle surfaces. Conventionally, CMP slurries contain strong acids, alkalis, or hazardous chemicals, which easily cause widespread environmental pollution and are harmful to the operators. It is a challenge to develop a novel green CMP slurry with eco-friendly and non-toxic compositions. Some substances with special structures contain versatile functional groups and have unique physical and chemical properties, including excellent chelating ability, ionization activity, biocompatibility and biodegradability, which have attracted the interest of CMP processing techniques. Therefore, researchers have begun to explore CMP slurries composed of environmentally friendly compositions. This review discussed the latest developments in the field of green CMP of metals and brittle wafers. The research on green CMP slurries was summarized and the future of the field was discussed.

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“…Inferior uniformity and surface quality can complicate later lithography steps and the integration of additional metal layers, and even affect the reliability of integrated circuits. 3,4 Therefore, key factors must be controlled accurately to achieve a favorable within-wafer non-uniformity (WIWNU) of material removal rate (MRR) and root mean square(RMS)roughness. 5 As a sacrificial layer under barrier, TEOS is a special type of silicon dioxide, which is deposited by using tetraethylorthosilicateas a raw material.…”

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confidence: 99%

Effects of Large Particles on MRR, WIWNU and Surface Quality in TEOS Chemical Mechanical Polishing Based on FA/O Alkaline Slurry

Liu

Niu

et al. 2018

ECS J. Solid State Sci. Technol.

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Material removal rate (MRR), within-wafer non-uniformity (WIWNU), and root mean square (RMS) roughness are three of the most important factors for chemical mechanical polishing (CMP) in giant-large-scale integrated circuit(GLSI) manufacturing. The effect of large particles on edge MRR, WIWNU and RMS roughness of tetraethylorthosilicate(TEOS) via considering the chemical action was investigated and quantified in this paper. To better understand the effect of large particles on TEOS polishing, four batches of colloidal silica with different large particle count (LPC) were used to formulate slurries. The colloidal silica with higher LPC was filtered and then polishing experiments were carried out using slurry prepared with filtered colloidal silica. Compared with the polishing effect pre and post ultrafiltration, edge MRR, average MRR, WIWNU and RMS roughness were reduced by 57.14%, 34.3%, 77.6%, and 61.8% respectively. Polishing and ultrafiltration experiments demonstrated that when LPC reached 8.6 million parts./ml, edge MRR increased sharply, and WIWNU and RMS roughness were deteriorated. The deterioration mechanism based on FA/O chelating agent was also proposed and discussed in this paper. Such study has certain guiding significance for choosing the colloidal silica produced by ion exchange method to formulate slurries and for ensuring the batch stability of slurry. FA/O chelating agent.

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Potassium sorbate as an inhibitor in copper chemical mechanical planarization slurries. Part II: Effects of sorbate on chemical mechanical planarization performance

Cited by 18 publications

References 22 publications

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing

Atomic-level flatness on oxygen-free copper surface in lapping and chemical mechanical polishing

A review: green chemical mechanical polishing for metals and brittle wafers

Effects of Large Particles on MRR, WIWNU and Surface Quality in TEOS Chemical Mechanical Polishing Based on FA/O Alkaline Slurry

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