Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

Yasuda, K.; Niraula, M.; Namba, S.; Kondo, T.; Muramatsu, S.; Yamashita, Hayato; Wajima, Y.; Agata, Y.

doi:10.1007/s11664-013-2680-2

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

Cited by 6 publications

References 11 publications

Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p +-Si Substrates by MOVPE

Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p +-Si Substrates by MOVPE

Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source

Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

Contact Info

Product

Resources

About