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Moreau, Wayne M.

doi:10.1007/978-1-4613-0885-0_11

Cited by 2 publications

(1 citation statement)

References 27 publications

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“…The standard nanolithography process employed by the semiconductor industry incorporates EBL and FIB lithography [147,148] . These methods have found extensive use in dielectric fabrication, as illustrated in Figs.…”

Section: Nanofabrication Techniques Of All-dielectric Metasurfacesmentioning

confidence: 99%

Advanced manufacturing of dielectric meta-devices

Yang,

Zhou,

Tsai

et al. 2024

Photonics Insights

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Metasurfaces, composed of two-dimensional nanostructures, exhibit remarkable capabilities in shaping wavefronts, encompassing phase, amplitude, and polarization. This unique proficiency heralds a transformative paradigm shift in the domain of next-generation optics and photonics, culminating in the development of flat and ultrathin optical devices. Particularly noteworthy is the all-dielectric-based metasurface, leveraging materials such as titanium dioxide, silicon, gallium arsenide, and silicon nitride, which finds extensive application in the design and implementation of high-performance optical devices, owing to its notable advantages, including a high refractive index, low ohmic loss, and cost-effectiveness. Furthermore, the remarkable growth in nanofabrication technologies allows for the exploration of new methods in metasurface fabrication, especially through wafer-scale nanofabrication technologies, thereby facilitating the realization of commercial applications for metasurfaces. This review provides a comprehensive overview of the latest advancements in state-of-the-art fabrication technologies in dielectric metasurface areas. These technologies, including standard nanolithography [e.g., electron beam lithography (EBL) and focused ion beam (FIB) lithography], advanced nanolithography (e.g., grayscale and scanning probe lithography), and large-scale nanolithography [e.g., nanoimprint and deep ultraviolet (DUV) lithography], are utilized to fabricate highresolution, high-aspect-ratio, flexible, multilayer, slanted, and wafer-scale all-dielectric metasurfaces with intricate nanostructures. Ultimately, we conclude with a perspective on current cutting-edge nanofabrication technologies.

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Section: Nanofabrication Techniques Of All-dielectric Metasurfacesmentioning

confidence: 99%

Advanced manufacturing of dielectric meta-devices

Yang,

Zhou,

Tsai

et al. 2024

Photonics Insights

View full text Add to dashboard Cite

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Plasma planarization for sensor applications

French

Wolffenbuttel

1995

J. Microelectromech. Syst.

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Abstract-Filling trenches in silicon using phosphosilicate glass (PSG) provides many possibilities for novel device structures for sensors and actuators. This paper describes a plasma planarization technique that provides fully planarized PSG filled silicon trenches for sensor applications. The technique consists of planarizing the substrate using two photoresist layers and plasma etching-back. The lower resist layer is the A25214 image reversal resist, which is patterned and then thermally cured. The upper resist layer is a global HPR204 coating. The plasma etching-back is carried out using C H F~/ C Z F~ gas mixture with an 0 2 addition. It is shown that by using the image reversal photoresist approach, fully planarized surface coating can be obtained without resorting to an additional mask. By adding 25 sccm (14%) 0 2 into the 137 sccm CHF3 +18 sccm C2F6 gas mixture, the etch rates for the photoresist and PSG can be matched. Process optimization for the two layer resist coating and plasma etching is discussed. [140]

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Postbake

Cited by 2 publications

References 27 publications

Advanced manufacturing of dielectric meta-devices

Advanced manufacturing of dielectric meta-devices

Plasma planarization for sensor applications

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