2022
DOI: 10.3389/fnbot.2022.948386
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Post-silicon nano-electronic device and its application in brain-inspired chips

Abstract: As information technology is moving toward the era of big data, the traditional Von-Neumann architecture shows limitations in performance. The field of computing has already struggled with the latency and bandwidth required to access memory (“the memory wall”) and energy dissipation (“the power wall”). These challenging issues, such as “the memory bottleneck,” call for significant research investments to develop a new architecture for the next generation of computing systems. Brain-inspired computing is a new … Show more

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Cited by 6 publications
(3 citation statements)
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References 79 publications
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“…Silicon carbide, silica NPs, hybrid organic-silicon, silicon nanowires / Smart fertilizer, [ 100] solar cells, [ 101] electrodes, [ 102] brain-inspired chips, [ 103] drug encapsulation, drug delivery, [ 104] cardiac tissue engineering, [ 105] bone tissue engineering, and implanted neural interfaces. [ 106] High capacity for lithium-ion battery, [ 102] well tolerated, [ 105] excellent mechanical properties.…”
Section: ]mentioning
confidence: 99%
“…Silicon carbide, silica NPs, hybrid organic-silicon, silicon nanowires / Smart fertilizer, [ 100] solar cells, [ 101] electrodes, [ 102] brain-inspired chips, [ 103] drug encapsulation, drug delivery, [ 104] cardiac tissue engineering, [ 105] bone tissue engineering, and implanted neural interfaces. [ 106] High capacity for lithium-ion battery, [ 102] well tolerated, [ 105] excellent mechanical properties.…”
Section: ]mentioning
confidence: 99%
“…NVMs (i.e., Flash memories) the information stored is retained even after the power supply is turned off. [ 166 ] The applications of charge‐based memory devices, such as DRAM and flash memory, in large‐scale integration technology may soon be restricted owing to their bigger size and higher power consumption. In order to obtain well‐suited memory devices for future high‐frequency nanoelectronics, numerous unconventional devices including ferroelectric RAM (FRAM), magnetoresistive RAM (MRAM), phase‐change RAM (PRAM), and resistive random‐access memory (RRAM), have been proposed for storing digital information.…”
Section: Information Storagementioning
confidence: 99%
“…These entities possess a distinctive characteristic whereby their resistance is altered in response to the record of applied voltage or current. 245 7.8.2. Synaptic plasticity.…”
Section: Memristive Synapses For Brain-inspired Computingmentioning
confidence: 99%