Post-Plasma-Etch Residue Removal Using CO[sub 2]-Based Fluids

Myneni, Satyanarayana; Hess, Dennis W.

doi:10.1149/1.1621879

Cited by 30 publications

(30 citation statements)

References 35 publications

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“…4, the stripping efficiency was found to be dependent on the temperature at the constant pressure (10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25). The stripping rate increased with the elevated temperature below 60°C, while the reverse results were obtained at 70°C and 80°C.…”

Section: Dependence Of the Removal Rate On The Temperature And Pressurementioning

confidence: 94%

“…However, scCO 2 is not a good solvent for polar species or polymers like photoresists because of the small cohesive energy and zero dipole moment. Previous studies have shown that the addition of co-solvents and/or surfactants into scCO 2 can enhance solvent strength of scCO 2 [8,17,18]. Hess [18] investigated the effect of scCO 2 /tetramethylammonium hydroxide (TMAH) mixtures containing methanol and water on the removal efficiency of post-plasma-etch residues.…”

Section: Introductionmentioning

confidence: 99%

“…Previous studies have shown that the addition of co-solvents and/or surfactants into scCO 2 can enhance solvent strength of scCO 2 [8,17,18]. Hess [18] investigated the effect of scCO 2 /tetramethylammonium hydroxide (TMAH) mixtures containing methanol and water on the removal efficiency of post-plasma-etch residues. The results showed that a 12 wt.% of a 4:1 volumetric mixture of 25% TMAH in methanol and deionized water in CO 2 at 3000 psi and 70°C was effective in removing the residues.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The effects of supercritical CO2 formulations on the removal of high-dose ion-implanted photoresists

Han

Wang

et al. 2013

Microelectronic Engineering

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Section: Dependence Of the Removal Rate On The Temperature And Pressurementioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The effects of supercritical CO2 formulations on the removal of high-dose ion-implanted photoresists

Han

Wang

et al. 2013

Microelectronic Engineering

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“…These residues contain carbonaceous polymeric mater from the photoresist and silica-based materials from the MSQ containing Si, C, and O with small amount of copper from the metal layer and fluorine from the etch gas [22][23][24][25][26] . The residues could have disadvantages in achieving long-term stability in electrical properties, and must be removed.…”

Section: Cleaning Low-kmentioning

confidence: 99%

Supercritical CO2-based solvents in next generation microelectronics processing

Zhang

Johnston²

2007

CHINESE SCI BULL

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Large amount of chemicals and highly purified-water are needed in microelectronic manufacture. The ability of solutions to penetrate tiny spaces will become significantly more challenging as the feature size of semiconductor devices decreases to nanoscale dimensions and the functional complexity of integrated circuitries (ICs) ever increases. Supercritical fluids (SCFs) possess a unique combination of properties (no surface tension and gas-like viscosity) that can potentially be exploited for application in microelectronics manufacturing and processing in response to needs for material-compatible cleaning systems, small-dimension developing solvents, and low chemical-use processes. Recent microelectronics processes for cleaning and rinsing of patterned porous low-k dielectrics and drying of photoresist in CO 2 -based solvents are the main focus of this review. Additional topics in supercritical fluid processing include spin coating of photoresists, development with nanoscale dimensions, metal deposition and silylation.supercritical carbon dioxide, low-k dielectrics cleaning, photoresist drying A manufacture method for semiconductor devices includes many steps: coating, photolithography, etching and ashing, cleaning, drying, etc. Incorporating new low-dielectric isolation materials and low-resistance metals (Cu replacing Al as interconnects) will be required in next generation microelectronic processing. As the features in semiconductor devices shrink to nanoscale dimensions, a major hurdle will emerge in processing steps involving lithography coating, development, metal deposition, cleaning, and drying. In addition, encouraged by increased regulations on the release of toxic chemicals and costs of water and solvent use, the semiconductor industry is eager to abate chemical and water usage in main production processes. Therefore, new concepts in semiconductor manufacture are required to challenge this complexity.Supercritical CO 2 (Sc CO 2 )-based technologies accept a number of such challenges. The solvation properties of CO 2 are unique. The high compressibility of near-critical CO 2 and the dependence of solubility, transport and other properties on density allow the solvent quality to widely vary via simple pressure control without introducing a new component. Compared with liquid solvents, supercritical fluids are less viscous due to the greater free volume. Consequently, solutes diffuse more quickly. The surface tension of liquid CO 2 is only 1.5 mN/m at 25℃ and reaches to zero at the critical point, where liquid droplets are no longer formed. The low interfacial tension will allow CO 2 -based solvents to penetrate and wet nearly all features, no matter whether hydrophilic or hydrophobic. CO 2 can be evaporated at room temperature without remaining trapped liquid inside the pore structures, which could potentially affect the final product. Sc CO 2 is environmentally benign, nonflammable, nontoxic, leaves no liquid wastes, and is

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“…Tseng et al (2005) have used supercritical CO2 with special co-solvents to clean residue after plasma O2 (6) . Myneni and Hess (2003) used tetramethyl ammonium hydroxide (TMAH) mixtures containing methanol and water as co-solvents with supercritical CO2 (7) . They reported that a 12 %w/w of a 4:1 volumetric mixture of 25 % TMAH in methanol and deionized water in CO2 at 20.7 MPa and 70 °C effectively removed the residue.…”

Section: Introductionmentioning

confidence: 99%

Supercritical CO2-Pulse Cleaning in Deep Microholes

Ota

Tsutsumi

2008

JAMDSM

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A novel supercritical cleaning process was proposed for removing contamination in high aspect ratio trenches and microholes of highly integrated semiconductor devices. The supercritical CO2-pulse cleaning with the periodic pressure swing of supercritical fluid between subcritical and supercritical conditions was conducted for removing particles in microholes of fabricated model structures. The microhole depth is 2.0 µm with microhole sizes ranging from 0.2 µm to 1.6 µm. The effects of microhole size on particle removal were investigated by means of non-destructive observation of high aspect ratio model structures with an optical microscope and SEM. The supercritical CO2-pulse cleaning efficiently removed more than 50 nm fine particles from the deep microholes owing to its drastic changes in density near the critical point by depressurization of the supercritical fluid.

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Post-Plasma-Etch Residue Removal Using CO[sub 2]-Based Fluids

Cited by 30 publications

References 35 publications

The effects of supercritical CO2 formulations on the removal of high-dose ion-implanted photoresists

The effects of supercritical CO2 formulations on the removal of high-dose ion-implanted photoresists

Supercritical CO2-based solvents in next generation microelectronics processing

Supercritical CO2-Pulse Cleaning in Deep Microholes

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