Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides

Chen, X.J.; Barnaby, Hugh; Vermeire, Bert; Holbert, Keith E.; Wright, David P.; Pease, R.L.; Schrimpf, R.D.; Fleetwood, D.M.; Pantelides, Sokrates T.; Shaneyfelt, M.R.; Adell, P.C.

doi:10.1109/tns.2008.2006972

Cited by 21 publications

(2 citation statements)

References 33 publications

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“…The two-stage hydrogen model incorporates hydrogen release mechanisms as well as the Nit formation due to hydrogen depassivation of Si-H bonds near the interface as proposed by McLean et al [8] After exposure to ionizing radiation, excess hydrogen released in devices would be trapped in the oxide with affecting the densities of Not. [9] Addition-ally, hydrogen molecules cracking at oxide trapped charges, releasing hydrogen to enhance Nit buildup, are included in the theoretical calculation. [7] Simultaneously the annealing of Nit is controlled by the passivation of interfacial defects by hydrogen molecules.…”

Section: Introductionmentioning

confidence: 99%

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Lü

Wang

et al. 2018

Chinese Phys. B

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The mechanisms occurring when the switched temperature technique is applied, as an accelerated enhanced low dose rate sensitivity (ELDRS) test technique, are investigated in terms of a specially designed gate-controlled lateral PNP transistor (GLPNP) that used to extract the interface traps (Nit) and oxide trapped charges (Not). Electrical characteristics in GLPNP transistors induced by 60 Co gamma irradiation are measured in situ as a function of total dose, showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP. Based on the analysis of the variations of Nit and Not, with switching the temperature, the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation. Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup. In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP, which provides us with a new insight into the test technique for ELDRS.

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Section: Introductionmentioning

confidence: 99%

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Lü

Wang

et al. 2018

Chinese Phys. B

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“…In pre vi ous years, many au thors have ana lysed an neal ing in sil i con semi con duc tor de vices [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. The main fo cus was on re search of an neal ing in MOS tran sis tors and in te grated cir cuits [4][5][6][7][11][12][13][14][15]], yet con sid er able at ten tion was also paid for the time-depend ent ra di a tion ef fects in bi po lar de vices and re lated field ox ides [3,8,10]. Ra di a tion re sponse of an in tegrated cir cuit is very com plex, be ing af fected by the char ac ter is tics of its tran sis tors (MOSFET or bi po lar, sil i con or heterojunction, etc.…”

Section: Introductionmentioning

confidence: 99%

Rapid and long-term gamma-radiation annealing in low-dropout voltage regulators

Vukić

2017

NUCL TECH RAD PROT

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Sam ples of four types of low-drop out volt age reg u la tors, with both se rial pnp and npn transis tors, were ex am ined in room-tem per a ture iso ther mal gamma ra di a tion an neal ing. Af ter un in ter rupted ex po sure to a to tal ion is ing dose of 500 Gy, bi ased and loaded volt age reg u lators were ex am ined in room-tem per a ture an neal ing within the first 30 min utes af ter the expo sure. Be side the on-line mea sure ment of out put volt age and qui es cent cur rent dur ing the thirty-min ute pe riod im me di ately af ter ir ra di a tion, also re sults were pro cured af ter 10-year room-tem per a ture spon ta ne ous re cov ery. Data ob tained dur ing the ir ra di a tion and rapid anneal ing were fit ted with lin ear, ex po nen tial, and power-law re gres sion func tions. A sim ple pro ce dure was pro posed, based on the qui es cent cur rent an neal ing fac tor, for the quick es tima tion of the in te grated volt age reg u la tor's ra di a tion sen si tiv ity dur ing the post-ir ra di a tion iso ther mal an neal ing. In or der to es ti mate the cir cuit's ra di a tion sen si tiv ity, im me di ately af ter ir ra di a tion, tested de vices have to be left in the same op er at ing con di tions as dur ing the ex posure. If a clear trend of the qui es cent cur rent re cov ery can be ob served, fur ther ex am i na tions have to be im ple mented to es ti mate if a cir cuit is ac cept ably ra di a tion-tol er ant. If no re cov ery trend can be ob served within the first hour af ter ir ra di a tion, or even fur ther deg ra da tion is no ticed, then the ex am ined volt age reg u la tor is a ra di a tion-sen si tive de vice and can not be used in ra di a tion en vi ron ments. The de scribed pro ce dure is based on the mac ro scopic ef fects of the ra di a tion-in duced charge-trap ping in field ox ides and in ter faces. Key words: volt age reg u la tor, gamma ra di a tion, qui es cent cur rent, an neal ing fac tor, iso ther mal an neal ing, post-ir ra di a tion ef fect, re gres sion anal y sis V. Dj. Vuki}.: Rapid and Long-Term Gamma-Ra di a tion An neal ing in ...

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The Effect of Temperature-Induced Quiescent Operating Point Shift on Single-Event Transient Sensitivity in Analog/Mixed-Signal Circuits

Ren

Chen

2014

J Electron Test

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Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides

Cited by 21 publications

References 33 publications

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Rapid and long-term gamma-radiation annealing in low-dropout voltage regulators

The Effect of Temperature-Induced Quiescent Operating Point Shift on Single-Event Transient Sensitivity in Analog/Mixed-Signal Circuits

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