Post-growth doping of bulk CdTe crystals with phosphorus

Alnajjar, A.; Watson, C. C.; Brinkman, A.W.; Durose, K.

doi:10.1016/0022-0248(92)90780-m

Cited by 14 publications

(5 citation statements)

References 10 publications

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“…All these devices have p-type absorbers. The p-doping has most often been achieved by copper [11][12][13][14][15][16][17][18][19] but alternatives have been explored, including phosphorous [20] and more recently arsenic [21,22], culminating in CdTe:As devices having PCEs > 20% [23].…”

Section: Introductionmentioning

confidence: 99%

Insights into post-growth doping and proposals for CdTe:In photovoltaic devices

Thomas¹,

Hobson²,

Phillips³

et al. 2022

J. Phys. Energy

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This paper is motivated by the potential advantages of higher doping and lower contact barriers in CdTe photovoltaic devices that may be realized by using n- type rather than the conventional p-type solar absorber layers. We present post-growth doping trials for indium in thin polycrystalline CdTe films using diffusion of indium metal and with indium chloride. Chemical concentrations of indium up to 1019 cm-3 were achieved and the films were verified as n-type by hard x-ray photoemission. Post growth chlorine treatment (or InCl3) was found to compensate the n-doping. Trial structures comprising CdS/CdTe:In verified that the doped absorber structures performed as expected both before and after chloride treatment, but it is recognized that this is not an optimum combination. Hence in order to identify how the advantages of n-type absorbers might be fully realized in future work, we also report simulations of a range of p-n junction combinations with n-CdTe, a number of which have the potential for high Voc.

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Section: Introductionmentioning

confidence: 99%

Insights into post-growth doping and proposals for CdTe:In photovoltaic devices

Thomas¹,

Hobson²,

Phillips³

et al. 2022

J. Phys. Energy

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“…[1][2][3][4][5] Indium is one of the most extensively studied n-type dopants in CdTe. Most doping experiments, reported up until now, were carried out with extrinsic dopants.…”

Section: Introductionmentioning

confidence: 99%

“…Most doping experiments, reported up until now, were carried out with extrinsic dopants. 3,4 In polycrystalline thin films of CdTe of the type used in efficient solar cells ͑up to 16% efficiency͒, 5 the dopant that leads to their p-type conductivity is not clear. 1,2 Copper, nitrogen, as well as group V elements, such as arsenic and phosphorus have been tried as acceptors.…”

Section: Introductionmentioning

confidence: 99%

“…1,2 Copper, nitrogen, as well as group V elements, such as arsenic and phosphorus have been tried as acceptors. 3 It is difficult to interpret the results on intrinsic doping of CdTe, as reported hitherto, because of an apparent lack of systematic variation of annealing temperature and cooling conditions. As is the case with other II-VI materials, self-compensation presents a major difficulty in CdTe.…”

Section: Introductionmentioning

confidence: 99%

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Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry

Lyahovitskaya

Chernyak

Greenberg

et al. 2000

Journal of Applied Physics

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Articles you may be interested inInfrared photoluminescence of arsenic-doped HgCdTe in a wide temperature range of up to 290 K Careful analysis of the Cd-Te pressure-temperature-composition phase diagram, shows a deviation of CdTe stoichiometry only in the Te-depletion direction between 450 and 550°C. Combined control over the semiconductor composition, via intrinsic defects, and over the atmosphere and cooling rate can, therefore, yield a process for intrinsic doping of CdTe at these relatively low temperatures. We present results that support this. Quenching of CdTe, following its annealing in Te atmosphere at 400-550°C, leads to p-type conductivity with a hole concentration of ϳ2 ϫ10 16 cm Ϫ3 . Slow cooling of the samples, after 550°C annealing in Te or in vacuum, increases the hole concentration by one order of magnitude, as compared to quenching at the same temperature. We explain this increase by the defect reaction between Te vacancies and Te interstitials. Annealing in Cd at 400-550°C leads to n-type conductivity with an electron concentration of ϳ2ϫ10 16 cm Ϫ3 . Annealing at 450-550°C in the equilibrium atmosphere, provided by adding CdTe powder, gives n-type material.

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“…More recently Alnajjar et al 10 have reported on the post-growth doping of bulk grown CdTe slices by heating the slices in orthophosphoric acid vapor. More recently Alnajjar et al 10 have reported on the post-growth doping of bulk grown CdTe slices by heating the slices in orthophosphoric acid vapor.…”

Section: Introductionmentioning

confidence: 99%