Post-etch residue removal in BCB/Cu interconnection structure

Yang, Hong; Kim, Young il; Lee, Moon-Chul; Park, Sunhee; Shim, Dongha; Park, C.M; Hong, Byungyou; Roh, Yonghan; Jung, Sang Youn; Song, Insang

doi:10.1016/s0040-6090(03)00332-8

Cited by 5 publications

(1 citation statement)

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“…Postetch residue from BCB has been shown to also increase contact resistance and is unable to be removed by the typical O 2 ashing processes. 12 The formation of grass-like residue was observed with 10% SF 6 , which is consistent with previous reports in literature. 2 At low SF 6 concentrations, etching of silicon in BCB is decreased, leading to an excess of silicon on the etch surface that can result in micromasking and the formation of grass-like residue.…”

Section: Resultssupporting

confidence: 92%

Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry

Douglas

Stevens

Fishgrab

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Section: Resultssupporting

confidence: 92%

Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry

Douglas

Stevens

Fishgrab

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Low Dielectric Benzocyclobutene-type Polymers Based on Facile Synthesis of Linear Fluorinated Monomer

et al. 2023

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Investigation of Post-Etch Copper Residue on Direct Bonded Copper (DBC) Substrates

Mei

Lü

Chen

et al. 2011

Journal of Elec Materi

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For many years, direct bonded copper (DBC) substrates have proved to be an excellent solution for electrical isolation and thermal management of highpower semiconductor modules. However, in this study we detected a copper residue on the surface of DBC alumina, presumably a result of pattern etching even in industry. As is known, growth of metal dendrites could be observed with the assistance of electric field, temperature, and humidity. Metal dendrites normally grow from the cathode to anode. Silver and copper are two kinds of metals susceptible to migration. In this work, copper dendrites could be formed at 400°C and 50 V/mm between conductors. These dendrites may impact the reliability of DBC in power electronic applications. Therefore, the formation of copper residue is an interesting phenomenon for etched DBC and warrants further attention in the future.

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Post-etch residue removal in BCB/Cu interconnection structure

Cited by 5 publications

References 1 publication

Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry

Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry

Low Dielectric Benzocyclobutene-type Polymers Based on Facile Synthesis of Linear Fluorinated Monomer

Investigation of Post-Etch Copper Residue on Direct Bonded Copper (DBC) Substrates

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