Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al₂O₃/p-Si Metal–Oxide–Semiconductor Capacitor

Abstract

The effect of space charge accumulation in resonant tunnelling devices is investigated. It is shown that the resonant current through a symmetric doublebarrier device flows immediately after opening the resonant tunnelling channel and does not require an exponentially long time to reach its steady-state value. It is also shown that space charge effects increase the width of the resonant peak in the l-V characteristic of a double-barrier device which tends to reduce the magnitude of the negative differential resistance.

Post deposition annealing effect on the properties of Al2O3/InP interface

“…19 Similarly, Al vacancies and O interstitials were suggested to form oxygen dangling bonds, contributing negative fixed oxide charges. 20 PL spectra in Fig. 3 showed that oxygen vacancy-related defects were present more for 20 min annealing, increasing the amount of positive fixed charges.…”

“…Trimethylaluminum (TMA) and deionized water (H 2 O) were used as the precursors with a purging gas of nitrogen (N 2 ). After depositing Al 2 O 3 , in-situ annealing in an N 2 ambient was performed with different annealing times (10,20 and 30 min). To examine the electrical characteristics of the films, a metal-insulator-semiconductor (MIS) diodes were fabricated with an Au Schottky electrode (diameter: 300, 500 µm, thickness: 50 nm) and an Al back contact (thickness: 100 nm).…”

Effects of boron incorporation on the structural, optical and electrical properties of sol–gel-derived ZrO2 gate dielectrics

“…The flat-band voltage shifts to positive bias voltage thus indicating that there is an increase in the amount of negative charges into the B:ZrO 2 films. The origin of the negative charges is not clear and under investigated; it may result from the residual OH À ions in the dielectric [36]. The small negative shift of V fb from À0.831 to À0.965 V may be caused by the increase of positive charges.…”

Effects of high energy neutrons and resulting secondary charged particles on the operation of MOSFETs

“…This lower energy light is incapable of creating electron-hole pairs in the oxide to recombine, and thus annihilate the trapped positive charge. The trapped charge can also be reduced using temperature-time means [11,12], where the extent of trapped-charge recovery is a complex function of irradiation history, type and thickness of oxide, gate-electrode material, oxide processing, annealing ambient, electrical bias, time, and temperature. Until now, not many studies emphasize on the permanent and impermanent effects on the crystal structure of the electronic components.…”