1997
DOI: 10.1016/s0022-0248(96)00765-8
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Possible trends for the growth of low scattering Nd:YVO4 laser crystals; phase relations — growth techniques

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Cited by 29 publications
(10 citation statements)
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“…The major problem in the growth process of such crystals lies in the valence change of vanadium ions, from V 5+ to V 4+ or even V 3+ , at high temperature. This was pointed out as the cause of the black color or black inclusions inside the grown crystals, as described by Erdei et al [7] in the case of YVO 4 crystal fibers. Other difficulties related to the growth process of those compounds are: (1) the high melting point (41800 1C); (2) oxygen deficiency due to vanadium oxide dissociation and evaporation; and (3) a characteristic spiral growth in the case of gadolinium vanadates [10,11].…”
Section: Introductionmentioning
confidence: 76%
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“…The major problem in the growth process of such crystals lies in the valence change of vanadium ions, from V 5+ to V 4+ or even V 3+ , at high temperature. This was pointed out as the cause of the black color or black inclusions inside the grown crystals, as described by Erdei et al [7] in the case of YVO 4 crystal fibers. Other difficulties related to the growth process of those compounds are: (1) the high melting point (41800 1C); (2) oxygen deficiency due to vanadium oxide dissociation and evaporation; and (3) a characteristic spiral growth in the case of gadolinium vanadates [10,11].…”
Section: Introductionmentioning
confidence: 76%
“…It has been demonstrate that the black color in the REVO 4 single crystals is associated to the changes in the vanadium ion valence [7]. For pure REVO 4 (RE ¼ Y and Gd), the effective segregation coefficient of the vanadium ionic species seems to behave as if they have similar values (k V 5þ eff % k V 4þ ;V 3þ eff ) [7] and only black color crystals and melt are obtained by LHPG technique in air atmosphere.…”
Section: Article In Pressmentioning
confidence: 94%
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“…Compared with the laser crystal Nd:YAG, Nd:YVO 4 crystal has a low pumping threshold, large emission section (2.7 times at 1.06 mm and 18 times at 1.34 mm), high absorption coefficient (4 times), wide absorptive area at 809 nm, strongly polarized laser output, and good mechanical physical and chemical properties [1][2][3][4]. Although the various growth techniques, such as Czochralski, Verneuil, floating zone, Bridgman, laser-heated pedestal growth (LHPG) and top seeded solution growth (TSSG) method, could be used to grow pure YVO 4 and rare earth-doped YVO 4 crystals, the Czochralski method is proved to be the most successful at present [5][6][7][8]. However, there are weak absorptions at 1064 nm in as-grown Nd:YVO 4 crystal, and have longer relaxation time.…”
Section: Introductionmentioning
confidence: 99%