1998
DOI: 10.1002/(sici)1521-4079(1998)33:5<793::aid-crat793>3.0.co;2-9
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Enhancement of the Automatic Diameter Control System for the Czochralski Growth of Nd:GdVO4 Crystals

Abstract: snstitute for wterils eserhD ohoku niversityD endiD tpnD nd genter for snterdisiplinry eserhD ohoku niversityD endiD tpn inhnement of the eutomti himeter gontrol ystem for the gzohrlski qrowth of xd X qdy R grystls he utomti dimeter ontrol system ws enhned for the growth of xdEdoped qdy R single rystls y the gzohrlski methodF st ws estimted tht exessive mount of feedk in the ontrol system is the effetive wy to improve the shpe of rreEerth vndte single rystlsF he spetrl nlysis for rystl weight nd genertor power… Show more

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Cited by 4 publications
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“…Of all the materials suitable for use as the active element with these types of lasers, the vanadate single crystals are very important due to the possibility of obtaining laser system with low threshold and high slope performance and efficiency [1,2]. However, the difficulties involved in the growth of high quality REVO 4 (RE ¼ Y, Gd) single crystals are limiting the production of these compact solid state laser systems [6][7][8][9]. The major problem in the growth process of such crystals lies in the valence change of vanadium ions, from V 5+ to V 4+ or even V 3+ , at high temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Of all the materials suitable for use as the active element with these types of lasers, the vanadate single crystals are very important due to the possibility of obtaining laser system with low threshold and high slope performance and efficiency [1,2]. However, the difficulties involved in the growth of high quality REVO 4 (RE ¼ Y, Gd) single crystals are limiting the production of these compact solid state laser systems [6][7][8][9]. The major problem in the growth process of such crystals lies in the valence change of vanadium ions, from V 5+ to V 4+ or even V 3+ , at high temperature.…”
Section: Introductionmentioning
confidence: 99%