Possible Topological Hall Effect above Room Temperature in Layered Cr<sub>1.2</sub>Te<sub>2</sub> Ferromagnet

Huang, Meng; Gao, Lei; Zhang, Ying; Lei, Xunyong; Hu, Guojing; Xiang, Junxiang; Zeng, Hualing; Fu, Xuewen; Zhang, Zengming; Chai, Guozhi; Peng, Yong; Lu, Yalin; Du, Haifeng; Chen, Gong; Zang, Jiadong; Xiang, Bin

doi:10.1021/acs.nanolett.1c00493

Cited by 46 publications

(53 citation statements)

References 51 publications

(63 reference statements)

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“…Therefore, it is difficult to form TM-cluster in TM-MoS 2 , which is consistent with literature. [18,21,26,37] Combining the previous analysis of the magnetic moments of S and Mo, we believe that the magnetic couplings of TM atoms are mediated by the S and Mo ions around them. [22] Adv.…”

Section: Magnetic Properties Of Tm-mos 2 and Magnetic Coupling In 2tm...supporting

confidence: 55%

“…The calculated incorporation energies (E i ) are all lower than 2.8 eV supercell −1 (97 atoms). Experimentally, the TMDs with high incorporation density had been reported, [18,21,26] indicating that our design is reasonable and can be achieved (Figure 1b; Table S1, Supporting Information). The ab initio molecular dynamics (AIMD) simulations [35] show that all TM-MoS 2 are thermodynamically stable up to 300 K (Figure 1c; Figure S2, Supporting Information).…”

Section: Structure and Stability Of Tm-mosmentioning

confidence: 54%

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Interlayer‐Incorporation of MoS₂ (TM‐MoS₂) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Bai

et al. 2022

Adv Elect Materials

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The multi‐layer 2D materials have attracted increasing interest because the intriguing properties can be achieved by various strategies, such as incorporating ions into the interlayer, turning angles between two layers, and applying strain, which may lead to wide applications in catalysis, ion‐batteries, superconductors, and nanodevices. In this work, there is a proposal to tune the electronic and magnetic properties of MoS2 bilayer for spintronics by incorporating transition‐metal elements into its interlayer (denoted as TM‐MoS2) based on the density‐functional theory (DFT) calculations. It is shown that TM‐MoS2 is thermodynamically stable and can be achieved due to low incorporation energy. It is found that n‐type doping or intrinsic semiconducting can be realized in MoS2 bilayer by controlling the incorporated transition‐metal atoms, accompanied with a rich variety of magnetic orderings. It is further shown that the electronic and magnetic properties of TM‐MoS2 can be substantially tuned by applying compression. Finally, it is demonstrated that the systems can be used as a spin filter, as supported by the spin‐polarized transport calculation. The findings illustrate that the physical properties of layered materials can be controlled by simple interlayer incorporation and shed light on the application of TM‐MoS2 as a fundamental building block for nanoelectronics and spintronics.

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Section: Magnetic Properties Of Tm-mos 2 and Magnetic Coupling In 2tm...supporting

confidence: 55%

Section: Structure and Stability Of Tm-mosmentioning

confidence: 54%

Interlayer‐Incorporation of MoS₂ (TM‐MoS₂) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Bai

et al. 2022

Adv Elect Materials

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“…Once the furnace reached 700 °C, the excess flux was removed from the crystals by centrifugation. It needs to be mentioned here that the growth method and parameters are different from those of CrTe 2 [ 23 ] and Cr 1.2 Te 2 single crystals [ 50 ] previously reported. The thicknesses of the Cr 5 Te 8 bulk sample for magnetic and transport measurements is 0.692 mm.…”

Section: Methodsmentioning

confidence: 99%

Self‐Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet

Zhang

Liu

Niu

et al. 2022

Adv Funct Materials

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One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe 2 layers in an ultra-high vacuum-free 2D magnetic crystal, Cr 5 Te 8 is reported. By self-introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau-like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe 2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. This work represents a new route to engineering low-power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism.

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“…Prominent among magnetic TMDs is Cr1+δTe2 -a self-intercalated TMD with tunable valency (Cr 2+ (3d 4 ) to Cr 4+ (3d 2 )) -which therefore serves as a promising candidate for modulating electronic and magnetic properties over a wide range (Fig. 1a) [37,38,39,40,41,42,43,44,45,46,47,48,49,50,51]. Our recent efforts have enabled a unique recipe to realize epitaxial thin films of Cr1+δTe2 over wide range of doping, with tunable magnetic properties [52].…”

Section: A Introductionmentioning

confidence: 99%

Widely Tunable Berry curvature in the Magnetic Semimetal Cr1+dTe2

Fujisawa¹,

Pardo-Almanza²,

Hsu³

et al. 2022

Preprint

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Magnetic semimetals have increasingly emerged as lucrative platforms hosting spin-based topological phenomena in real- and momentum spaces. Of particular interest is the emergence of Berry curvature, whose geometric origin, accessibility from Hall transport experiments, and material tunability, bodes well for new physics and practical devices. Cr1+δTe2, a self-intercalated magnetic transition metal dichalcogenide (TMD), exhibits attractive natural attributes relevant to such applications, including topological magnetism, tunable electron filling, magnetic frustration etc. While recent studies have explored real-space Berry curvature effects in this material, similar considerations of momentum-space Berry curvature are lacking. Here, we systematically investigate the electronic structure and transport properties of epitaxial Cr1+δTe2 thin films over a wide range of doping, δ (0.33 – 0.71). Spectroscopic experiments reveal the presence of a characteristic semi-metallic band region near the Brillouin Zone edge, which shows a rigid band like energy shift as a function of δ. Transport experiments show that the intrinsic component of the anomalous Hall effect (AHE) is sizable, and undergoes a sign flip across δ. Finally, density functional theory calculations establish a causal link between the observed doping evolution of the band structure and AHE: the AHE sign flip is shown to emerge from the sign change of the Berry curvature, as the semi-metallic band region crosses the Fermi energy. Our findings underscore the increasing relevance of momentum-space Berry curvature in magnetic TMDs and provide a unique platform for intertwining topological physics in real and momentum spaces.

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Possible Topological Hall Effect above Room Temperature in Layered Cr_1.2Te₂ Ferromagnet

Cited by 46 publications

References 51 publications

Interlayer‐Incorporation of MoS₂ (TM‐MoS₂) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Interlayer‐Incorporation of MoS₂ (TM‐MoS₂) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Self‐Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet

Widely Tunable Berry curvature in the Magnetic Semimetal Cr1+dTe2

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Possible Topological Hall Effect above Room Temperature in Layered Cr1.2Te2 Ferromagnet

Cited by 46 publications

References 51 publications

Interlayer‐Incorporation of MoS2 (TM‐MoS2) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Interlayer‐Incorporation of MoS2 (TM‐MoS2) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Self‐Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet

Widely Tunable Berry curvature in the Magnetic Semimetal Cr1+dTe2

Contact Info

Product

Resources

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Possible Topological Hall Effect above Room Temperature in Layered Cr_1.2Te₂ Ferromagnet

Interlayer‐Incorporation of MoS₂ (TM‐MoS₂) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Interlayer‐Incorporation of MoS₂ (TM‐MoS₂) to Achieve Unique Magnetic and Electronic Properties for Spintronics