Interlayer‐Incorporation of MoS₂ (TM‐MoS₂) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Abstract

The multi‐layer 2D materials have attracted increasing interest because the intriguing properties can be achieved by various strategies, such as incorporating ions into the interlayer, turning angles between two layers, and applying strain, which may lead to wide applications in catalysis, ion‐batteries, superconductors, and nanodevices. In this work, there is a proposal to tune the electronic and magnetic properties of MoS2 bilayer for spintronics by incorporating transition‐metal elements into its interlayer (denoted as TM‐MoS2) based on the density‐functional theory (DFT) calculations. It is shown that TM‐MoS2 is thermodynamically stable and can be achieved due to low incorporation energy. It is found that n‐type doping or intrinsic semiconducting can be realized in MoS2 bilayer by controlling the incorporated transition‐metal atoms, accompanied with a rich variety of magnetic orderings. It is further shown that the electronic and magnetic properties of TM‐MoS2 can be substantially tuned by applying compression. Finally, it is demonstrated that the systems can be used as a spin filter, as supported by the spin‐polarized transport calculation. The findings illustrate that the physical properties of layered materials can be controlled by simple interlayer incorporation and shed light on the application of TM‐MoS2 as a fundamental building block for nanoelectronics and spintronics.

MoS2 and MoS2 Nanocomposites for Adsorption and Photodegradation of Water Pollutants: A Review

“…The polytypes 2H and 3R occur naturally, while 1T is a metastable structure. The semiconducting 2H phase is naturally more stable and has been extensively investigated for energy-related applications [ 56 , 57 ], transistors [ 58 ], photodetectors [ 59 ], valleytronics, spintronic devices, and optoelectric devices [ 58 , 60 , 61 ]. In the 2H-MoS 2 phase, each Mo coordinates with S atoms in a trigonal prismatic arrangement, with two layers in each unit cell in hexagonal symmetry, as shown in Figure 1 .…”

Co3X8 (X = Cl and Br): multiple phases and magnetic properties of the Kagome lattice

“…[1][2][3][4] Notably, their magnetic properties exhibit rich characteristics, owing to surface modification, 5,6 interfacial interactions, 5,7 and potential coupling with other properties. [8][9][10][11] Moreover, the magnetic properties of 2D materials can be easily regulated by various strategies, such as doping, interlayer incorporation, [12][13][14][15] strain, 16,17 functionalization, 6,18 and applying an electric field. 19,20 Forming contacts or heterojunctions with other materials is also commonly used to tune the magnetic properties, 21,22 which is desired for application in nanodevices and spintronics.…”

“…25,26 Magnetoelectric coupling in bilayer VS 2 results in ferrovalley properties. 27 2D materials with tunable magnetic properties are applied in many fields, 28 such as spin tunnel junctions, 10,22 spin filters, 12,29 memory devices, 30,31 sensors, 32 and quantum devices. 33 Kagome lattices have triggered great interest in recent years due to their amazing properties, such as flat bands in Nb 3 Cl 8 34,35 and CoSn, 36,37 the charge density wave (CDW) and unconventional superconductivity in the CsV 3 Sb 5 family, [38][39][40][41] and the spin liquid state and intrinsic anomalous Hall effect in Co 3 S 2 Sn 2 .…”

“…25,26 Magnetoelectric coupling in bilayer VS 2 results in ferrovalley properties. 27 2D materials with tunable magnetic properties are applied in many fields, 28 such as spin tunnel junctions, 10,22 spin filters, 12,29 memory devices, 30,31 sensors, 32 and quantum devices. 33…”