Possibilities of ion-beam diagnostics of thin-film epitaxial and nonoriented structures

Abstract

Certain possibilities and features of ion beam diagnostics of thin film epitaxial and nonoriented structures are discussed. The main advantage of this technique (its ability to determine the element concen tration profile across the target depth of several micrometers without destroying the target and the need to use standards) is illustrated by real examples. A brief description of the Sokol 3 ion beam analytical complex, a basic tool for the ion beam sounding of materials, is given.

Quantum-classical mechanics as an alternative to quantum mechanics in molecular and chemical physics

“…Therefore, it must be excluded from the general solution (54) as describing an unphysical state. Consequently, the state of electron transfer is determined by the solution [79]. …”

“…In other words, the quantities p˜ι in the method of Green's functions have the same physical meaning as in the Born-Oppenheimer method. Thus, the state of electron transfer at its “start” from the donor 1 is described by the wave function [79]. …”

“…Along with the objective of damping the singular electron-nuclear movement, our procedure of introducing a finite magnitude of γ has extra important objective: it allows us to ensure the parameter of smallness of the problem [79]. …”

“…(71) does a significant part just in such small surroundings of points q=0 and q=L (see Ref. [83]), which give a small contribution to the transfer rate constant [11, 79]. Therefore, for Ge (see Eq.…”

“…Here, the dependence of the amplitude A12 on all transient (tunneling and above-barrier) states ...mι... is determined by Eq. (80) [11, 79], the external summation is performed over all final states ...mι2... on the surfacefalse∑ιωι(mι2badbreak−mι1)=ω12in concordance with the law of energy conservation…”