Positron studies of defects in ion-implanted SiC

Bräuer, G.; Anwand, W.; Coleman, P. G.; Knights, A. P.; Plazaola, F.; Pacaud, Y.; Skorupa, W.; Stormer, John C.; Willutzki, P.

doi:10.1103/physrevb.54.3084

Cited by 116 publications

(95 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Based on the magnitude of the longest lifetime component ͑ cl = 340± 40 ps͒, we can estimate the size of the vacancy clusters. This lifetime can be compared to those reported in SiC, 26 where the Si vacancy to SiC bulk lifetime ratio is close to the Zn vacancy to ZnO bulk lifetime ratio. We estimate that the clusters consist of at most five missing Zn-O pairs, as there is no reason to assume that these clusters would be Zn rich or O rich.…”

Section: Origin Of the Defectsmentioning

confidence: 99%

Positron annihilation lifetime spectroscopy of ZnO bulk samples

et al. 2007

Self Cite

View full text Add to dashboard Cite

In order to gain a further insight into the knowledge of point defects of ZnO, positron annihilation lifetime spectroscopy was performed on bulk samples annealed under different atmospheres. The samples were characterized at temperatures ranging from 10 to 500 K. Due to difficulties in the conventional fitting of the lifetime spectra caused by the low intensity of the defect signals, we have used an alternative method as a solution to overcome these difficulties and resolve all the lifetime components present in the spectra. Two different vacancy-type defects are identified in the samples: Zn vacancy complexes ͑V Zn -X͒ and vacancy clusters consisting of up to five missing Zn-O pairs. In addition to the vacancies, we observe negative-ion-type defects, which are tentatively attributed to intrinsic defects in the Zn sublattice. The effect of the annealing on the observed defects is discussed. The concentrations of the V Zn -X complexes and negative-ion-type defects are in the 0.2-2 ppm range, while the cluster concentrations are 1-2 orders of magnitude lower.

show abstract

Section: Origin Of the Defectsmentioning

confidence: 99%

Positron annihilation lifetime spectroscopy of ZnO bulk samples

et al. 2007

Self Cite

View full text Add to dashboard Cite

show abstract

“…The 6H SiC polytype is the most studied (6H has triple periodicity in the stacking sequence of the hexagonal planes compared to 2H), with 4H and 3C gathering more and more interest. Silicon vacancies, silicon-carbon divacancies, and vacancy clusters have been studied in as-grown, irradiated, and implanted SiC (Brauer et al, 1996;Kawasuso et al, 1996;Polity, Huth, and Lausmann, 1999;Ling, Beling, and Fung, 2000;Henry et al, 2003;Aavikko et al, 2007). The optical ionization levels of vacancy defects have also been studied (Arpiainen et al, 2002) using positron spectroscopies.…”

Section: Novel Semiconductors: Iii-n Sic and Znomentioning

confidence: 99%

Defect identification in semiconductors with positron annihilation: Experiment and theory

2013

View full text Add to dashboard Cite

Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.

show abstract

“…This can be linked with the thermal annealing processing at high ions dose. 33 It is worth to note that the temperature during proton irradiation seems to play a significant role in inducing vacancies, presumably due to the temperature dependence on defect mobility.…”

Section: Resultsmentioning

confidence: 99%

Ferromagnetism in proton irradiated 4H-SiC single crystal

et al. 2015

View full text Add to dashboard Cite

Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

show abstract

Positron studies of defects in ion-implanted SiC

Cited by 116 publications

References 34 publications

Positron annihilation lifetime spectroscopy of ZnO bulk samples

Positron annihilation lifetime spectroscopy of ZnO bulk samples

Defect identification in semiconductors with positron annihilation: Experiment and theory

Ferromagnetism in proton irradiated 4H-SiC single crystal

Contact Info

Product

Resources

About