Positron beam spectroscopy for the assessment of the structure and defect density of titanium nitride

Rice-Evans, P.C.; Saleh, A.S.; Bull, Steve

doi:10.1016/0169-4332(94)00352-1

Cited by 4 publications

(1 citation statement)

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“…Positron annihilation spectroscopy (PAS) has proved to be an excellent non-destructive probe of materials containing a distribution of vacancy-type defects [7], and previously has been used to investigate TiN films [8,9]. Most recently Rice-Evans et al [10] studied the effect of substrate bias on the defect concentration of magnetron-sputtered TiN films deposited on steel and found that an optimum voltage of −60 V produced fewest defects in the film.…”

Section: Introductionmentioning

confidence: 99%

Investigation of magnetron-sputtered titanium nitride films using positron annihilation spectroscopy

Knights¹,

Saleh²,

Rice-Evans³

et al. 1996

J. Phys.: Condens. Matter

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Positron annihilation spectroscopy in conjunction with a variable-energy beam has been used to investigate the variation of the vacancy-type defect density of titanium nitride films with varying nitrogen concentrations. Decreases in the Doppler-broadened lineshape parameter were observed as the nitrogen partial pressure used in the manufacture of the samples was increased from 0.01 Pa to 0.1 Pa indicating a decrease in the positron trapping at vacancy defects in this range. It is suggested that the positrons are trapped in Ti vacancies with the variation in trapping being due to increasing N-atom migration onto Ti sublattice vacancy sites as the nitrogen partial pressure is increased.

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