Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

Ohshima, Takeshi; Uedono, Akira; Abe, Hiroshi; Chen, Z.Q.; Itoh, Hisayoshi; Yoshikawa, Masahito; Abe, Kôji; Eryu, Osamu; Nakashima, Kouichi

doi:10.1016/s0921-4526(01)00780-3

Cited by 7 publications

(4 citation statements)

References 12 publications

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“…3). This value of S is similar to those reported for 6H-SiC implanted with either Al or P ions [5,6]. Brauer et al [7] reported that the normalized S value for divacancy (V Si V C ) containing a silicon (V Si ) and a carbon (V C ) vacancies in 6H-SiC is 1.05.…”

Section: Study Of Vacancy-type Defects By Passupporting

confidence: 84%

“…In the un-implanted sample, the value of S close to the surface is larger than those in the energy range above 20 keV indicating that some positrons diffuse toward the surface and annihilate. This behavior is typical for n-type SiC [5,6]. For the as-implanted samples, S near the surface increases compared to the spectrum before implantation.…”

Section: Study Of Vacancy-type Defects By Pasmentioning

confidence: 66%

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Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

Ohshima¹,

Uedono

Eryu

et al. 2003

MSF

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We have investigated the annealing of vacancy-type defects and B diffusion in SiC using positron annihilation spectroscopy (PAS) and secondary ion mass spectroscopy (SIMS). Boron (B) and carbon (C) ions were implanted into 6H-SiC substrates, and the samples were annealed up to 1650 o C in Ar. In the PAS study, defective layer to a depth of 200 nm from the surface is observed after annealing between 800 and 1200 o C. This region disappears after annealing above 1500 o C. No significant difference in the annealing behavior of the vacancy-type defects is observed for only B-and C/B-implanted samples. In the SIMS study, the out-diffusion of B in 6H-SiC is observed after annealing above 1400 o C and a dip in the B concentration is created close to the surface. This outdiffusion of B is suppressed by C/B-implantation. This suppression tends to be enhanced by the temperature of the implantation and the concentration of the implanted C.

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Section: Study Of Vacancy-type Defects By Passupporting

confidence: 84%

Section: Study Of Vacancy-type Defects By Pasmentioning

confidence: 66%

Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

Ohshima¹,

Uedono

Eryu

et al. 2003

MSF

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“…In particular, the epitaxial SiC pn-junction gate structure (with low operating gate current) is believed to be inherently more robust against high temperature degradation than other (insulated gate, Schottky gate, bipolar, heterojunction and/or III-N) transistor technology approaches that would otherwise (i.e., notwithstanding overriding durability consideration) offer frequency, power dissipation, and/or circuit design and performance benefits. Though it is non-planar, the mesa-etched epi-gate structure avoids defects and extreme activation temperatures associated with high-dose p-type implants in SiC (21)(22)(23)(24). Despite inferior mobility compared to 4H-SiC, 6H-SiC was selected as having demonstrated superior polytype structural stability during some thermal processing steps (25)(26)(27)(28).…”

Section: Circuit Technologymentioning

confidence: 99%

(Invited) Assessment of Durable SiC JFET Technology for +600° to -125° Integrated Circuit Operation

2011

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Electrical characteristics and circuit design considerations for prototype 6H-SiC JFET integrated circuits (ICs) operating over the broad temperature range of -125 °C to +600 °C are described. Strategic implementation of circuits with transistors and resistors in the same 6H-SiC n-channel layer enabled ICs with nearly temperature-independent functionality to be achieved. The frequency performance of the circuits declined at temperatures increasingly below or above room temperature, roughly corresponding to the change in 6H-SiC n-channel resistance arising from incomplete carrier ionization at low temperature and decreased electron mobility at high temperature. In addition to very broad temperature functionality, these simple digital and analog demonstration integrated circuits successfully operated with little change in functional characteristics over the course of thousands of hours at 500 °C before experiencing interconnect-related failures. With appropriate further development, these initial results establish a new technology foundation for realizing durable 500 °C ICs.

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“…Moreover, entirely different lattice sites might also be found. For instance, the existence of mixed divacancies V Si -V C is reported in [18][19][20]. While one expects that single vacancies V Si or V C might trap interstitial TM atoms on substitutional Si or C sites, divacancies V Si -V C might trap TMs in V Si -TM-V C complexes where the position of the TM may correspond to the bond-center (BC) site in an undisturbed lattice.…”

Section: Introductionmentioning

confidence: 99%

Lattice location of implanted transition metals in 3C–SiC

Costa

Wahl

Correia

et al. 2017

J. Phys. D: Appl. Phys.

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We have investigated the lattice location of implanted transition metal (TM) 56 Mn, 59 Fe and 65 Ni ions in undoped single-crystalline cubic 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the CERN-ISOLDE facility. We find that in the room temperature as-implanted state, most Mn, Fe and Ni atoms occupy carbon-coordinated tetrahedral interstitial sites (T C). Smaller TM fractions were also found on Si substitutional (S Si) sites. The TM atoms partially disappear from ideal-T C positions during annealing at temperatures between 500 °C and 700 °C, which is accompanied by an increase in the TM fraction occupying both S Si sites and random sites. An explanation is given according to what is known about the annealing mechanisms of silicon vacancies in silicon carbide. The origin of the observed lattice sites and their changes with thermal annealing are discussed and compared to the case of Si, highlighting the feature that the interstitial migration of TMs in SiC is much slower than in Si.

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Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

Cited by 7 publications

References 12 publications

Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

(Invited) Assessment of Durable SiC JFET Technology for +600° to -125° Integrated Circuit Operation

Lattice location of implanted transition metals in 3C–SiC

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