Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering

Gupta, Sayak Dutta; Soni, Ankit; Joshi, Vipin; Kumar, Jeevesh; Sengupta, Rudrarup; Khand, Heena; Shankar, Bhawani; Mohan, Nagaboopathy; Raghavan, Srinivasan; Bhat, Navakanta; Shrivastava, Mayank

doi:10.1109/ted.2019.2908960

Cited by 39 publications

(11 citation statements)

References 25 publications

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“…Notably, when the V m increased from 0 to 9 kV in fabricating the a-TiO 2 -containing FETs, the linear FET mobility increased from 17 to 26 cm 2 /(V s), the V th shifted from 0.27 to 0.10 V, the SS factor decreased from 0.58 to 0.33 V/dec, and the on/off current ratio increased from 1.8 to 5.0. These values are similar to those values obtained from FETs with atomic layer deposited and sputtered Al 1– x Ti x O 3 dielectric layers. , …”

Section: Resultsmentioning

confidence: 99%

Mesh Bias Controlled Synthesis of TiO₂ and Al_0.74Ti_0.26O₃ Thin Films by Mist Chemical Vapor Deposition and Applications as Gate Dielectric Layers for Field-Effect Transistors

Yokoyama

Kuddus

Hossain

et al. 2022

ACS Appl. Electron. Mater.

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The effect of applying a mesh bias during the syntheses of amorphous titanium oxide (a-TiO2) thin films via mist chemical vapor deposition (mist-CVD) was investigated. When a negative bias is applied to the upstream electrode, some of the large mist particles are captured by the mesh electrode, promoting the generation of fine mist particles and increases the number density, resulting in a smooth and dense a-TiO2 network. As a result, the rate of deposition of the a-TiO2 thin films and the surface roughness decreased. The dielectric constant of the a-TiO2 film also increases from 48 to 57.5. These findings suggest that in the synthesis of a-TiO2 films by mist-CVD is promising for promoting the generation of dense a-TiO2 networks and improving the junction properties at the a-TiO2/c-Si interface. Additionally, the effect of applying a mesh bias in the synthesis of amorphous aluminum titanium oxide (a-Al0.74Ti0.26O3) thin alloy films was studied.

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Section: Resultsmentioning

confidence: 99%

Mesh Bias Controlled Synthesis of TiO₂ and Al_0.74Ti_0.26O₃ Thin Films by Mist Chemical Vapor Deposition and Applications as Gate Dielectric Layers for Field-Effect Transistors

Yokoyama

Kuddus

Hossain

et al. 2022

ACS Appl. Electron. Mater.

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“…Nevertheless, the existence of a p-GaN gate layer or semitransparent gate contact can inevitably absorb the incident UV light, which largely reduces the responsivity. Using transparent p-oxide gate is an emerging method to realize normally off . However, at present, it is difficult to obtain stable oxides with high hole concentration to deplete 2DEG and hence to reduce the dark current. , For the method of gate recess, partially or fully recessed gates which are commonly used to realize normally off, have insurmountable drawbacks.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Wang,

Feng,

Zhong

et al. 2023

ACS Photonics

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In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination. The design of the novel device structure introduces double two-dimensional electron gas channels, which remarkably improve the effectiveness in the collection of photogenerated carriers and make it work as a twoterminal normally off device. The device exhibited a high responsivity of 2.1 × 10 7 A/W and a high specific detectivity of 1.7 × 10 15 Jones under the illumination of 9.7 μW/cm 2 , indicating the excellent capability of detecting an ultraweak signal. Meanwhile, a distinguished transient performance was also observed when it operated under 500 Hz pulse illumination. Combining fabrication conciseness and outstanding performance advantages, the proposed AlGaN/GaN double-channel HEMT UV PD shows promising potential in the development of next-generation UV PDs.

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“…G allium Nitride High Electron Mobility Transistors (GaN HEMTs) have emerged as strong contenders for power electronics and radio frequency (RF) applications [1], however, as a manifestation of a strong spontaneous and piezoelectric polarization, GaN HEMTs are essentially depletion-mode type in nature. To this end, GaN experimentalists have proposed several approaches such as a recessed-gate [2], p-cap gate [3], AlTiO gate [4], fluorine plasma ion implantation [5] etc. so as to obtain normally-off operation in GaN devices.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model

Malik¹,

Mir

Bhat

et al. 2021

IEEE J. Electron Devices Soc.

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In this work, we report the development of a new physics-based analytical model for current and charge characteristics of Double Channel (DC) Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs). The model has at its core the self-consistent calculation of the charge densities, for both upper and lower channels, obtained from a solution of the Schrödinger and Poisson equations. Fermi-Dirac (FD) distribution together with 2D density of states is used for mobile carrier statistics in both the channels. Furthermore, drift-diffusion transport is used to compute the channel current using charge densities at channel extremities. Finally, the model is validated against TCAD simulation and experimental data for a DC-GaN-HEMT. The model, by virtue of its fully physics-based nature, precisely captures the charge screening effect in the lower channel without invoking any empirical clamping functions, unlike prior models, and also possesses the feature of being geometrically scalable.

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Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering

Cited by 39 publications

References 25 publications

Mesh Bias Controlled Synthesis of TiO₂ and Al_0.74Ti_0.26O₃ Thin Films by Mist Chemical Vapor Deposition and Applications as Gate Dielectric Layers for Field-Effect Transistors

Mesh Bias Controlled Synthesis of TiO₂ and Al_0.74Ti_0.26O₃ Thin Films by Mist Chemical Vapor Deposition and Applications as Gate Dielectric Layers for Field-Effect Transistors

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model

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Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering

Cited by 39 publications

References 25 publications

Mesh Bias Controlled Synthesis of TiO2 and Al0.74Ti0.26O3 Thin Films by Mist Chemical Vapor Deposition and Applications as Gate Dielectric Layers for Field-Effect Transistors

Mesh Bias Controlled Synthesis of TiO2 and Al0.74Ti0.26O3 Thin Films by Mist Chemical Vapor Deposition and Applications as Gate Dielectric Layers for Field-Effect Transistors

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model

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Product

Resources

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Mesh Bias Controlled Synthesis of TiO₂ and Al_0.74Ti_0.26O₃ Thin Films by Mist Chemical Vapor Deposition and Applications as Gate Dielectric Layers for Field-Effect Transistors

Mesh Bias Controlled Synthesis of TiO₂ and Al_0.74Ti_0.26O₃ Thin Films by Mist Chemical Vapor Deposition and Applications as Gate Dielectric Layers for Field-Effect Transistors