Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Wang, Haodong; Feng, Meixin; Zhong, Yaozong; Chen, Xin; Gao, Hongwei; Yilmaz, Ercan; Sun, Qian; Yang, Hui

doi:10.1021/acsphotonics.3c01261

Cited by 6 publications

(2 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The shot noise of our structure is shown in Figure S3, and the noise equivalent power (NEP) can be estimated according to the following equation: NEP = S n R where S n is the shot noise. As shown in Figure S3, the noise current is mainly dominated by 1/ f noise.…”

Section: Resultsmentioning

confidence: 99%

A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor

Wang,

Cai,

et al. 2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

In recent years, an ultraviolet (UV) photodetector (PD) utilizing two-dimensional electron gas (2DEG) formed at the AlGaN/GaN heterostructure as a GaN-based recessed-gate high-electron-mobility transistor (HEMT) has become a hot topic for UV and solar blind detection. Herein, a GaN-based HEMT UV PD with a recessed gate was prepared, and the conductive channel is closed due to the GaN-based recessed gate, which keeps the device normally off without a p-GaN gate or extra gate bias; the 2DEG is fully depleted with an extremely low dark current density of 1.87 × 10 −6 mA/mm under dark conditions. Under 365 nm UV irradiation, the conductive region is restored and the device exhibits a high photo-to-dark current ratio (PDCR) of 7 × 10 8 , a peak responsivity of 1.75 × 10 4 A/W, a high specific detectivity (D*) of 4.87 × 10 16 Jones, and a superior UV-tovisible rejection ratio of 2.9 × 10 6 . Moreover, a fast response time of 1.55/1.60 ms can be maintained, which is ascribed to the use of triethylgallium in intrinsic GaN (i-GaN) epitaxy to achieve improved crystalline quality, the incorporation of a doped AlGaN layer to reduce the scattering of 2DEGs by positive polarity impurities, and the implementation of asymmetric electrodes for rapid separation and transfer of photogenerated electron−hole pairs. The results indicate that our designed recessed-gate AlGaN/GaN HEMT is an ideal UV PD with high responsivity, low dark current, and rapid response time.

show abstract

Section: Resultsmentioning

confidence: 99%

A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor

Wang,

Cai,

et al. 2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…However, the latter structure displays a slower response time than that of the p-GaN gate. In addition, GaN photodetectors with other structures, such as MOSFET-type, GaN HEMT-type with sandwiched p-GaN layers, and double channels, have also achieved good photodetection performance.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried p-GaN Layer

Liu,

Wang,

Liu

et al. 2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

GaN, due to its large band gap and high carrier mobility, has been widely used in fast-response ultraviolet (UV) photodetectors (PDs). The existing junction-based and twodimensional electron gas (2DEG)-based devices have different focuses on the performance of ultraviolet detection. To achieve comprehensive performance, we fabricate a high-performance UVPD utilizing a GaN recessed-gate high electron mobility transistor (HEMT) integrated with a p-GaN buried layer. Benefiting from the effective p-GaN/u-GaN depletion junction, the device has a low dark current of 1.75 × 10 −9 A at a voltage bias (V ds ) of 2 V. Under 365 nm illumination, the recovery of 2DEG is obtained and results in an ultrahigh photocurrent exceeding 1 mA at V ds = 2 V. As a result, a maximum responsivity (R) of 532 A/W, an external quantum efficiency of 1.81 × 10 5 %, and a specific detectivity (D*) of 1.09 × 10 14 Jones are attained at a light power density (P) of 0.24 mW cm −2 . Moreover, the influence of oxygen plasma treatment on the gate recess is explored. The response time is shortened from 1.07/1.20 to 0.79/1.05 ms, and the maximum I light /I dark ratio is increased by more than 10 times. Such high performance substantiates that the structure of GaN recessed-gate HEMT with p-GaN buried layer architecture holds great promise for the creation of an outstanding UV photodetector.

show abstract

Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging

Zhang,

Liang,

Yang

et al. 2024

Advanced Materials

View full text Add to dashboard Cite

High‐quality imaging units are indispensable in modern optoelectronic systems for accurate recognition and processing of optical information. To fulfill massive and complex imaging tasks in digital age, devices with remarkable photoresponsive characteristics and versatile reconfigurable functions on a single device platform are in demand but remain challenging to fabricate. We report an AlGaN/GaN‐based double‐heterostructure, incorporated with a unique compositionally graded AlGaN structure to generate a channel of polarization‐induced two‐dimensional electrons that can be modulated to control electron separation, collection, and storage process in the channel of the fabricated phototransistor. As a result, when exposed to different light sources, the device shows reconfigurable multifunctional photoresponsive behaviors with superior characteristics owing to the successful programming of the 2DEGs by the combined gate and drain voltage inputs. A self‐powered mode with a responsivity over 100 A/W and a photoconductive mode with a responsivity of ∼108 A/W were achieved, with the ultimate demonstration of a 10×10 device array for imaging. More intriguingly, the device can be switched to photoelectric synapse mode, emulating synaptic functions to denoise the imaging process while prolonging the image storage capability. Demonstrating three‐in‐one operational characteristics in a single device offers a new path toward future integrated and multifunctional imaging units.This article is protected by copyright. All rights reserved

show abstract

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Cited by 6 publications

References 45 publications

A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor

A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor

High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried p-GaN Layer

Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging

Contact Info

Product

Resources

About